Buffer Layer Openings for Defect-Reduced LED Epitaxy
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Solution Overview
Problem
The lateral structuring of epitaxially grown semiconductor wafers for LEDs using dry chemical etching processes introduces defects, particularly affecting low current efficiency and aging stability, especially in smaller LED base areas.
Innovation Solution
A method involving a growth substrate with a buffer layer having openings where semiconductor bodies are grown, allowing for selective epitaxial growth without exposing the light-active layers to etching processes, thereby eliminating defect-inducing etching methods and ensuring minimal defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry chemical etching processes are used for lateral structuring of semiconductor wafers, then the structuring can be achieved, but defects are introduced into the light-active layers which impair performance
Solution Approach 1:
The harmful dry etching process is extracted and removed from the manufacturing sequence. Instead of etching the semiconductor wafer laterally, the invention forms openings in a buffer layer and grows semiconductor bodies vertically within these openings, completely avoiding the application of etching processes to the light-active layers.
Solution Approach 2:
The conventional approach is inverted: instead of growing a continuous semiconductor layer and then etching it laterally to form structures, the invention first creates openings in the buffer layer and then grows semiconductor bodies vertically within these openings. This reverses the sequence of operations and eliminates the harmful etching step.
2Productivity
If the LED base area is made smaller to improve efficiency, then the current efficiency improves, but the defect impact becomes more pronounced
Solution Approach 1:
The invention applies local quality by creating discrete semiconductor bodies within openings in the buffer layer. Each semiconductor body can be independently optimized for small base area to achieve high current efficiency, while the surrounding buffer layer structure provides mechanical support and isolation, preventing defect propagation and maintaining aging stability even in small-scale devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in semiconductor components with reduced defects, improved efficiency, and enhanced stability by avoiding dry etching, which maintains the quality of light-active layers and supports reliable, cost-efficient production of optoelectronic components.
Implementation Method 1
Before providing the growth substrate having the buffer layer arranged thereon, the buffer layer can be applied to, in particular grown up on the growth substrate using an epitaxy method.
Implementation Method 2
In particular after the structuring of the buffer layer, in the openings, the semiconductor bodies are grown on the subregions of the buffer layer by a further epitaxy method.
Data Source
AI summary
Optoelectronic components, groups of optoelectronic components, and methods for producing a component or a plurality of optoelectronic components are provided. The method may include providing a growth substrate having a buffer layer arranged thereon. The buffer layer may be structured in such a way that it has a plurality of the openings which are spaced apart from one another in lateral directions. A plurality of semiconductor bodies may be formed in the openings, wherein in the areas of the openings, the buffer layer has subregions which are arranged in a vertical direction between the growth substrate and the semiconductor bodies. The growth substrate may be detached from the semiconductor bodies. The buffer layer may be removed at least in the areas of the subregions.