Buffer Oxide Layer Formation for Semiconductor Metal Patterns
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face defects due to contamination and increased resistance in conductive structures, particularly in metal patterns, which are not adequately addressed by existing manufacturing methods.
Innovation Solution
A method involving the formation of a preliminary buffer oxide layer on semiconductor devices, followed by a plasma treatment using inert gases or mixtures of inert gases and hydrogen, to transform the metal oxide layer into a buffer oxide layer with higher density and lower resistance, thereby reducing metal contamination and defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal pattern is formed in a conductive structure, then electrical conductivity is improved, but metal contamination and resistance increase occur
Solution Approach 1:
A buffer oxide layer is introduced as an intermediary substance between the metal pattern and the surrounding environment. This buffer oxide layer prevents metal atoms from diffusing into adjacent regions, thereby eliminating metal contamination while preserving the electrical conductivity of the metal pattern. The buffer oxide acts as a barrier that mediates the interaction between the metal and the semiconductor structure.
Solution Approach 2:
The conductive structure is transformed into a composite material system consisting of multiple layers: the metal pattern embedded within and protected by the buffer oxide layer. This composite structure combines the high conductivity of metal with the protective properties of oxide materials, achieving both electrical performance and contamination prevention.
2Reliability
If a metal pattern is formed in a conductive structure, then electrical conductivity is improved, but resistance of the conductive structure increases
Solution Approach 1:
The buffer oxide layer serves as a protective intermediary that prevents oxidation of the metal pattern surface. By preventing metal oxidation, the buffer oxide maintains the low-resistance properties of the metal conductive structure throughout the manufacturing process and device operation, ensuring consistent electrical performance.
3Object-generated harmful factors
If a preliminary buffer oxide layer is formed to cover the structure, then metal contamination is reduced, but the buffer oxide layer requires transformation to achieve optimal performance
Solution Approach 1:
The preliminary buffer oxide layer undergoes parameter changes through plasma treatment, transforming its physical and chemical properties. The plasma process modifies the oxide layer's density, composition, and protective characteristics, converting it from a preliminary protective layer to an optimized buffer oxide layer that provides superior contamination prevention while maintaining process integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively decreases metal contamination and resistance in semiconductor devices, enhancing their performance and reliability by forming a high-density buffer oxide layer that prevents outgassing and metal diffusion.
Implementation Method 1
Deoxidizing the metal oxide layer may include performing a plasma treatment on the structure. The plasma treatment may be performed using an inert gas or a mixture of an inert gas and hydrogen gas.
Implementation Method 2
deoxidizing the metal oxide layer so that the preliminary buffer oxide layer is transformed into a buffer oxide layer
Data Source
AI summary
A method of manufacturing a semiconductor device, the method including forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed; forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed at the exposed portion of the metal pattern; and deoxidizing the metal oxide layer so that the preliminary buffer oxide layer is transformed into a buffer oxide layer.