Buffer Plug in Through-Silicon Vias for Chip Package Delamination

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Through-silicon vias in chip packages are prone to delamination during thermal cycle tests, reducing the reliability of packaged chips due to the separation of the redistribution layer from the sidewall of the vias.

Innovation Solution

A chip package design featuring a semiconductor substrate with through holes, a conductive trace layer, a buffer plug, and a protection layer, where the buffer plug is partially cured to reduce adhesion and deform under thermal stress, and the buffer plug's coefficient of thermal expansion is adjusted to match the difference between the protection and insulating layers, preventing delamination.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If through-silicon vias are used to reduce chip package size, then the chip package size is reduced, but the redistribution layer delaminates from the sidewall of the vias during thermal cycle tests

Engineering Contradiction:
Improvechip package sizeVSAvoidreliability of packaged chips
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

A buffer plug is introduced as an intermediary component between the conductive trace layer (redistribution layer) and the protection layer within the through-silicon via. This buffer plug mediates the interaction between these layers during thermal cycling, absorbing expansion differences and preventing direct delamination between the redistribution layer and via sidewall, thus resolving the contradiction between via functionality and reliability.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The buffer plug's coefficient of thermal expansion is specifically adjusted to match the difference between the protection layer and insulating layer. By changing this physical parameter, the buffer plug compensates for thermal expansion mismatches during thermal cycling, preventing delamination while maintaining the via's size-reduction function.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the buffer plug is designed to deform under thermal stress, then delamination is prevented, but the structural integrity may be compromised

Engineering Contradiction:
Improveresistance to delaminationVSAvoidstructural integrity
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The buffer plug is positioned locally within the through-silicon via, specifically between the conductive trace layer and protection layer. Its material properties are optimized for local stress absorption and deformation under thermal stress, while the overall structural integrity is maintained by the rigid semiconductor substrate and via structure. This localized approach prevents delamination without compromising global structural strength.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances the reliability of chip packages by preventing delamination during thermal cycles and maintaining electrical connectivity, while also providing a hermetic seal and moisture resistance.

Implementation Method 1

the buffer plug's coefficient of thermal expansion is adjusted to match the difference between the protection and insulating layers, preventing delamination

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 2

A conductive trace layer is conformally formed over the first surface and extends to the through holes

Methodology Applied
Scientific EffectAdhesion: Adhesive

Data Source

PatentUS8432032B2Chip package and fabrication method thereof
Publication Date: 2013.04.30 XINTEC INC
  • US8432032B2 patent drawing
  • US8432032B2 patent drawing
  • US8432032B2 patent drawing

AI summary

A chip package and a fabrication method thereof are provided. The chip package includes a semiconductor substrate, having a first surface and an opposite second surface. A through hole is formed on the first surface, extending from the first surface to the second surface. A conductive trace layer is formed on the first surface and in the through hole. A buffer plug is formed in the through hole and a protection layer is formed over the first surface and in the through hole.