Buffered DRAM Interface Layout for Socket-Free High-Capacity Memory
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Solution Overview
Problem
Current memory systems face challenges in achieving higher capacity and speed while reducing manufacturing costs, particularly in the design of DRAM memory interfaces, where the existing socket-based connections are bulky, slower, and less reliable, leading to increased costs and space requirements.
Innovation Solution
The implementation of a buffer interface that operates between a host interface and memory devices, redistributing data connections to create a slower but wider interface, allowing for direct connections between DRAM dies and a substrate, thereby reducing physical size, improving speed, and lowering costs by eliminating the need for socket components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If socket-based connections are used for memory interfaces, then ease of installation and maintenance is improved, but device complexity, physical size, and manufacturing cost increase while speed and reliability decrease
Solution Approach 1:
The patent extracts and eliminates the socket component from the memory interface system. By directly connecting the memory device to the substrate without an intermediate socket, the design removes the bulky mechanical connection component, thereby reducing device complexity and physical size while improving signal integrity and speed.
2Ease of operation
If socket-based connections are used for memory interfaces, then ease of installation and maintenance is improved, but manufacturing cost and physical size increase
Solution Approach 1:
The socket component is extracted and removed from the system. This eliminates the need for socket manufacturing, procurement, and assembly, thereby reducing manufacturing costs and physical footprint while simplifying the overall device structure.
3Ease of operation
If socket-based connections are used for memory interfaces, then ease of installation and maintenance is improved, but speed and reliability decrease
Solution Approach 1:
The socket intermediate connection is removed, creating a direct path between the memory device and substrate. This eliminates signal degradation, reflection, and impedance mismatch issues associated with socket connections, thereby improving data transfer speed and system reliability.
4Productivity
If interface width is increased to achieve higher capacity, then data throughput is improved, but physical size and complexity increase
Solution Approach 1:
The patent segments the memory interface into multiple independent channels or banks. By dividing the high-capacity interface into smaller, manageable segments, the design achieves high data throughput through parallel operation while keeping each individual channel's physical implementation compact and manageable, thereby reducing overall complexity.
Data Source
AI summary
Memory devices, systems and methods include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some configurations, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected memory devices, systems and methods include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.