Buffered Memory Interface for Wide DRAM Links in Compact Modules
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current memory systems face challenges in achieving higher capacity and speed while reducing manufacturing costs, particularly in DRAM memory, where the physical layout and socket interfaces consume space, slow down communication, and increase costs.
Innovation Solution
The implementation of a buffer interface that operates between a host interface and memory devices, redistributing data connections to create a slower but wider data pathway, allowing for direct connections between memory devices and substrates, thereby reducing physical size, improving speed, and lowering costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If memory devices use traditional socket interfaces and physical layouts, then ease of manufacture and component standardization are improved, but communication speed decreases and physical footprint increases
Solution Approach 1:
The patent extracts the interface logic from traditional socket-based memory modules and integrates it directly into the memory device itself. The memory device includes built-in interface circuitry that communicates directly with the host system, eliminating the need for separate socket interfaces and reducing physical footprint while improving communication speed through direct connections.
Solution Approach 2:
The patent transitions from traditional two-dimensional planar layouts to three-dimensional stacked memory architectures. Multiple memory dies are stacked vertically and interconnected through through-silicon vias (TSVs), enabling higher capacity and improved speed while reducing the physical footprint by utilizing the vertical dimension.
2Productivity
If memory systems use wider data pathways operating at slower rates, then manufacturing costs are reduced and physical size is minimized, but data throughput must be maintained
Solution Approach 1:
The patent implements dynamic interface configurations that can adapt between different data widths and clock rates. The memory device includes reconfigurable interface circuitry that can operate in multiple modes (e.g., 64-bit at high speed or 128-bit at lower speed), allowing optimization for cost-effective manufacturing while maintaining required data throughput through flexible operational parameters.
Data Source
AI summary
Apparatus and methods are described, including memory devices and systems. Memory devices, systems and methods may include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some cases, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected memory devices, systems and methods may include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.