Transistor Bulk Bias Switching for Noise Figure and Transient Response
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Solution Overview
Problem
Existing semiconductor devices, such as power amplifiers and low-noise amplifiers, face challenges in achieving improved noise figure and optimized transient response.
Innovation Solution
The semiconductor device incorporates a first set of transistors with a floating bulk terminal and a second set of transistors with a bulk terminal that can be selectively coupled to a bias terminal, allowing for improved noise figure in steady states and desired transient response in transient states.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the bulk terminal is floating, then the noise figure is improved, but the transient response becomes slow
Solution Approach 1:
The transistor bulk terminals are segmented into two distinct groups: first bulk terminals that remain floating to minimize noise, and second bulk terminals that are selectively coupled to bias terminals for fast transient response. This segmentation allows each group to serve its specific function without compromising the other.
Solution Approach 2:
The bulk terminal configuration is made dynamic through selective coupling. The second bulk terminals can transition between floating and bias-coupled states based on operational requirements, enabling the device to adapt between noise-optimized and speed-optimized modes as needed.
2Speed
If the bulk terminal is coupled to bias terminal, then the transient response is improved, but the noise figure deteriorates
Solution Approach 1:
The bulk terminals are divided into two functional groups: first bulk terminals that remain floating to maintain low noise figure, and second bulk terminals that are selectively coupled to bias terminals to provide fast transient response when needed.
Solution Approach 2:
Different bulk terminals are assigned different electrical characteristics based on local functional requirements. First bulk terminals maintain a floating state for noise-sensitive operations, while second bulk terminals are selectively coupled to bias terminals for speed-critical operations.
3Device complexity
If a single bulk terminal configuration is used, then the device structure is simple, but it cannot simultaneously achieve low noise figure and fast transient response
Solution Approach 1:
The transistor bulk terminals are segmented into first and second groups with different configurations. First bulk terminals are floating to minimize noise, while second bulk terminals are selectively coupled to bias terminals to provide fast transient response, allowing simultaneous optimization of both parameters.
Solution Approach 2:
The semiconductor device achieves multi-functionality by incorporating bulk terminals with different configurations within the same device structure, enabling it to simultaneously provide both low noise figure and fast transient response capabilities.
Data Source
AI summary
A semiconductor device includes a first set of transistors and a second set of transistors. The first set of transistors includes a first terminal, a second terminal, a control terminal and a bulk terminal, and the bulk terminal of the first set of transistors is floating. The second set of transistors includes a first terminal, a second terminal, a control terminal and a bulk terminal, and the first terminal, the second terminal and the control terminal of the second set of transistors being coupled to the first terminal, the second terminal and the control terminal of the first set of transistors, respectively. When the semiconductor device is in a steady state, the bulk terminal of the second set of transistors is decoupled from the bias terminal. When the semiconductor device is in a transient state, the bulk terminal of the second set of transistors is coupled to the bias terminal.