Bulk Oxide CMP Composition for Faster 3D NAND Dielectric Removal
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Solution Overview
Problem
Conventional chemical mechanical polishing (CMP) compositions require excessive time to remove dielectric material from advanced 3D NAND flash memory devices, leading to reduced throughput and increased costs.
Innovation Solution
A CMP composition comprising ceria particles with specific size and surface area characteristics, combined with a hydroxamic acid or pyrone compound, is used to enhance dielectric removal rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional CMP compositions are used for polishing 3D NAND flash memory devices, then the polishing process can be performed with standard compositions, but excessive polishing time is required to remove the excess dielectric material
Solution Approach 1:
The patent modifies the chemical composition parameters by incorporating specific polishing rate accelerators and inhibitors, along with topography control agents, to enhance the dielectric removal rate while maintaining process control and avoiding excessive polishing time
Solution Approach 2:
The CMP composition uses a composite formulation combining multiple functional components including abrasive particles, polishing rate accelerators, polishing rate inhibitors, and topography control agents to achieve both high removal rate and process stability
2Productivity
If conventional CMP compositions are used for polishing 3D NAND flash memory devices, then the composition formulation remains simple and cost-effective, but the dielectric removal rate is insufficient to meet throughput requirements
Solution Approach 1:
The patent optimizes the concentration and selection of chemical additives including polishing rate accelerators and inhibitors to achieve the required dielectric removal rate while managing the complexity of the composition formulation
Solution Approach 2:
The CMP composition is designed to perform multiple functions simultaneously: removing dielectric material at high rates, controlling surface topography, and maintaining process stability, thereby achieving high productivity despite increased composition complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high dielectric layer polishing results, particularly on patterned wafers, improving throughput and reducing costs by increasing the dielectric removal rate.
Implementation Method 1
abrading the substrate to remove a portion of at least one dielectric layer
Implementation Method 2
a hydroxamic acid or a pyrone compound
Data Source
AI summary
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, ceria particles dispersed in the liquid carrier, the ceria particles having a weight average particle size of greater than 90 nm as measured using a CPS Disc Centrifuge Particle size analyzer and a BET surface area of greater than 50 m2/g; and a hydroxamic acid or a pyrone compound.