Bulk Acoustic Resonator Step Structure for Coupling and Attenuation

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Solution Overview

Problem

Current bulk-acoustic resonators face challenges in miniaturization and performance enhancement due to limitations in manufacturing techniques, particularly in the design and structure of the insertion layer, which affect attenuation performance and electromechanical coupling coefficients.

Innovation Solution

The design incorporates a substrate with a piezoelectric layer having a flat portion and an extension portion with step portions, along with an insertion layer disposed on the extension portion, optimizing the width and thickness of the insertion layer to improve attenuation performance and electromechanical coupling, while maintaining a conductive material for efficient electrical connection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the insertion layer width and thickness are increased to improve manufacturing feasibility, then the manufacturing precision may deteriorate due to variations affecting attenuation performance and electromechanical coupling coefficients

Engineering Contradiction:
Improvemanufacturing feasibilityVSAvoidattenuation performance
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by systematically varying the width and thickness of the insertion layer to identify optimal ranges. By changing these physical parameters and measuring their effects on attenuation performance and electromechanical coupling coefficients, the invention determines specific parameter values that maintain high performance while being manufacturable.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies local quality by creating different structural regions within the piezoelectric layer - specifically a first region with different properties than a second region. This local differentiation allows the insertion layer to have optimized characteristics in specific areas, maintaining high attenuation performance while accommodating manufacturing variations.

Inventive Principle:
Principle #3Local quality

2Reliability

If the insertion layer width and thickness are optimized for high attenuation performance, then the device complexity increases due to precise dimensional requirements

Engineering Contradiction:
Improveattenuation performanceVSAvoiddimensional precision requirements
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent determines specific parameter ranges for the insertion layer width and thickness that achieve high attenuation performance. By establishing these parameter boundaries, the invention balances performance optimization with manufacturing practicality, avoiding excessive complexity while maintaining reliability.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies partial action by optimizing the insertion layer dimensions to a sufficient degree rather than requiring absolute precision. The determined width and thickness ranges provide adequate attenuation performance without demanding ultra-precise manufacturing, thereby reducing device complexity while maintaining reliability.

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the attenuation performance and effective electromechanical coupling coefficient of the bulk-acoustic resonator, improving its overall performance and manufacturing feasibility by maintaining high values despite variations in the insertion layer's width and thickness.

Implementation Method 1

employing semiconductor thin-film wafer manufacturing technology... causing resonance using piezoelectric characteristics obtained through a piezoelectric dielectric material being deposited on a semiconductor substrate

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Data Source

PatentUS11437977B2Bulk-acoustic resonator and elastic wave filter device
Publication Date: 2022.09.06 SAMSUNG ELECTRO MECHANICS CO LTD
  • US11437977B2 patent drawing
  • US11437977B2 patent drawing
  • US11437977B2 patent drawing

AI summary

A bulk-acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer at least partially covering the first electrode, and including a flat portion disposed in a central region, and an extension portion disposed outside the flat portion and having at least one step portion; an insertion layer disposed on the extension portion; and a second electrode disposed on upper portions of the insertion layer and the piezoelectric layer. The extension portion includes at least one first surface and at least one second surface disposed below an upper surface of the flat portion, and a connection surface connecting an upper surface of the flat portion to the at least one first surface or the at least one second surface, or connecting first surfaces among the at least one first surface to each other or second surfaces among the at least one second surface to each other.