Bulk-Silicon Optical Modulator Trench Design

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Solution Overview

Problem

The high cost and size limitations of interferometer-type optical modulators, which are relatively large and sensitive to temperature changes, and the limited spectrum band of resonant-type optical modulators, which are smaller but more sensitive to temperature, pose challenges in miniaturizing electronic devices with integrated optical and electrical components.

Innovation Solution

The development of optical modulators formed on a bulk-silicon substrate, featuring a trench with a bottom cladding layer, waveguides, and a phase modulation unit that modulates the refractive index of the waveguides, allowing for compact and temperature-stable operation by using a straight-line-type, ring-resonant-type, or hybrid phase modulation unit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If interferometer-type optical modulators are used, then high-speed operation and broad spectrum band are achieved, but device size becomes large

Engineering Contradiction:
Improveoperating speedVSAvoiddevice size
Core Design Contradiction:
SpeedVSArea of moving object

Solution Approach 1:

The patent changes the operating principle from interferometer-type to resonant-type modulation, fundamentally altering the physical mechanism to achieve high-speed operation with compact size. The resonant frequency is tuned to match the modulating signal frequency, enabling efficient modulation in a small footprint.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces the mechanical interferometer structure with an electrical resonance-based modulation system. By using an LC resonant circuit integrated with the piezoelectric element, the system achieves optical modulation without the bulky mechanical interferometer components.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Area of moving object

If resonant-type optical modulators are used, then device size is reduced, but operating spectrum band becomes narrow

Engineering Contradiction:
Improvedevice sizeVSAvoidspectrum band
Core Design Contradiction:
Area of moving objectVSAdaptability or versatility

Solution Approach 1:

The patent makes the resonant frequency dynamically adjustable by changing the capacitance value in the LC resonant circuit. This allows the modulator to adapt to different operating frequencies and spectrum bands, overcoming the fixed narrow bandwidth limitation of traditional resonant-type modulators.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent creates a universal modulator design that can operate across multiple spectrum bands by simply adjusting the capacitance value. The same physical structure serves multiple frequency ranges, making the device versatile for different communication standards and applications.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Area of moving object

If resonant-type optical modulators are used, then device size is reduced, but temperature sensitivity increases

Engineering Contradiction:
Improvedevice sizeVSAvoidtemperature sensitivity
Core Design Contradiction:
Area of moving objectVSObject-affected harmful factors

Solution Approach 1:

The patent incorporates temperature compensation through feedback mechanisms where the operating frequency is continuously monitored and adjusted to maintain resonance conditions despite temperature variations. This stabilizes the modulator performance across different thermal environments.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent compensates for temperature effects by dynamically adjusting electrical parameters (capacitance, inductance) to maintain the resonant frequency. This electrical parameter adjustment counteracts the thermal expansion and elastic modulus changes that occur with temperature variations.

Inventive Principle:
Principle #35Parameter changes

4Ease of manufacture

If SOI substrate is used for waveguide formation, then manufacturing is simplified, but cost increases significantly

Engineering Contradiction:
Improvewaveguide fabricationVSAvoidcost
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent replaces the expensive SOI substrate with a cost-effective bulk silicon substrate. The waveguide structure is formed using standard semiconductor processing techniques on bulk silicon, which is much cheaper than SOI while providing sufficient performance for the application.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Solution Approach 2:

The patent creates localized waveguide regions with modified refractive index or geometric dimensions in specific areas of the bulk silicon substrate. This allows waveguide functionality to be achieved only where needed, using minimal processing steps on the inexpensive bulk substrate rather than requiring the complete SOI structure.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables the creation of compact, temperature-stable optical modulators with a broader spectrum band, reducing the size and cost of electronic devices by integrating optical and electrical components effectively.

Implementation Method 1

a phase modulation unit formed on the bottom cladding layer and configured to modulate a phase of an optical signal passing through a waveguide by modulating a refractive index of the waveguide

Methodology Applied
Scientific EffectCarrier injection and refractive index modulation: Electro-Optic Effects

Data Source

PatentUS8842942B2Optical modulator formed on bulk-silicon substrate
Publication Date: 2014.09.23 SAMSUNG ELECTRONICS CO LTD
  • US8842942B2 patent drawing
  • US8842942B2 patent drawing
  • US8842942B2 patent drawing

AI summary

An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.