Bulk-Wafer Vertical TFT Structure for Miniature Target Sensing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor circuitry for diagnostic devices is expensive and inefficient in capturing miniature targets, leading to degraded accuracy due to the use of silicon-on-insulator structures.
Innovation Solution
The use of thin-film-transistors (TFTs) formed on a bulk semiconductor wafer, which are cheaper and more efficient in capturing and detecting miniature targets, improving signal-to-noise ratio and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon-on-insulator structures are used for semiconductor circuitry in diagnostic devices, then manufacturing reliability is improved, but manufacturing cost increases and detection efficiency decreases
Solution Approach 1:
The patent replaces expensive silicon-on-insulator structures with cost-effective bulk semiconductor wafers that can be manufactured using standard CMOS fabrication processes. This substitution maintains device functionality while significantly reducing manufacturing costs, making diagnostic devices more economically viable.
Solution Approach 2:
The patent modifies the substrate parameter from silicon-on-insulator to bulk semiconductor wafer, changing the manufacturing approach to align with conventional CMOS processes. This parameter change enables cost-effective production while maintaining the required reliability for diagnostic applications.
2Reliability
If silicon-on-insulator structures are used for semiconductor circuitry in diagnostic devices, then manufacturing reliability is improved, but detection efficiency and accuracy deteriorate
Solution Approach 1:
The patent replaces silicon-on-insulator structures with bulk semiconductor wafers that provide superior detection characteristics. This substitution enables better capture and detection of miniature targets such as ions, nucleic acids, and viruses, thereby improving measurement precision while maintaining manufacturing reliability.
Solution Approach 2:
The patent changes the substrate parameter from silicon-on-insulator to bulk semiconductor wafer, which fundamentally improves the detection capability. This parameter change enhances the signal-to-noise ratio and allows for more accurate detection of miniature targets in diagnostic applications.
3Ease of manufacture
If conventional semiconductor circuitry is used in diagnostic devices, then manufacturing processes are established, but production efficiency decreases and costs increase
Solution Approach 1:
The patent designs the semiconductor circuitry to be compatible with standard CMOS fabrication processes, making it universally manufacturable using existing infrastructure. This universality enables efficient production while leveraging established manufacturing capabilities, thereby improving productivity without sacrificing ease of manufacture.
Solution Approach 2:
The patent changes the manufacturing approach parameter from specialized silicon-on-insulator processes to standard bulk semiconductor CMOS processes. This parameter change aligns with conventional fabrication workflows, improving production efficiency and scalability while maintaining ease of manufacture through process standardization.
Data Source
AI summary
An interconnect structure is disposed over a semiconductor substrate. The interconnect structure includes a plurality of interconnect layers. A first thin-film transistor (TFT) and a second TFT disposed over the semiconductor substrate. The first TFT and the second TFT each vertically extend through at least a subset of the interconnect layers. An opening is formed in the interconnect structure. The opening is disposed between the first TFT and the second TFT. A sensing film is disposed over a bottom surface and side surfaces of the opening.