Bundled Memory Bus Width Customization via Scribe Line Mask Layers

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing memory technologies are inflexible as they have fixed memory depth and bus width, limiting user customization and adaptability.

Innovation Solution

A bundled memory system is developed, where at least one mask layer is formed over scribe lines to create electrical connections between input/output buses of multiple memory dies, allowing for customizable memory depth and bus width configurations by connecting external input/output buses of varying sizes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If memory dies are isolated through scribe lines with no signal connection over die boundaries, then manufacturing simplicity is maintained, but adaptability and flexibility are reduced

Engineering Contradiction:
Improvememory depth and bus width customizationVSAvoidelectrical connection structure
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The invention segments the electrical connection structure into multiple functional layers: mask layers formed over scribe lines, bonding pads on memory dies, and external input/output buses. This segmentation allows independent optimization of each component while achieving overall adaptability for customized memory configurations.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The mask layers formed over scribe lines act as intermediary elements that enable electrical signal transmission between previously isolated memory dies. These intermediary structures facilitate customizable memory depth and bus width without requiring complete redesign of the memory die architecture.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Adaptability or versatility

If fixed memory depth and bus width are used in memory dies, then manufacturing precision is maintained, but adaptability to user requirements is reduced

Engineering Contradiction:
Improveuser customization capabilityVSAvoidmanufacturing process flexibility
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The invention introduces dynamic configurability to previously fixed memory parameters. By forming electrical connections between multiple memory dies through mask layers and external input/output buses, the system can dynamically adjust memory depth and bus width to match user requirements while maintaining standardized manufacturing processes for individual memory dies.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The external input/output buses serve multiple functions: they connect different memory dies, enable customizable memory configurations, and maintain compatibility with standard manufacturing processes. This multi-functionality achieves user adaptability without compromising manufacturing ease.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Adaptability or versatility

If electrical connections are formed over scribe lines using mask layers, then adaptability is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvememory configuration flexibilityVSAvoidelectrical connection formation precision
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The mask layers are formed over scribe lines during the manufacturing process before final assembly, establishing predetermined electrical connection paths. This preliminary action ensures precise electrical connections while maintaining manufacturing efficiency through integrated process planning.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS9589931B2Bundled memory and manufacture method for a bundled memory with an external input/output bus
Publication Date: 2017.03.07 ETRON TECH INC
  • US9589931B2 patent drawing
  • US9589931B2 patent drawing
  • US9589931B2 patent drawing

AI summary

A bundled memory includes a substrate, a first memory die, a second memory die, a scribe line, and an electrical connection. The first memory die has a first input/output bus, and the second memory die has a second input/output bus, where the first memory die and the second memory die are formed over the substrate. The scribe line is formed between the first memory die and the second memory die. The electrical connection is formed over the scribe line for electrically connecting to the first input/output bus and the second input/output bus, where the electrical connection is electrically connected to an external input/output bus, where a size of the external input/output bus of the bundled memory is larger than or equal to a size of the first input/output bus and a size of the second input/output bus.