Buried Electrode Schottky Diode Field Distribution
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Solution Overview
Problem
The concentration of electric fields and current at the edge of Schottky electrodes in semiconductor devices can lead to damage during operation, particularly in Schottky barrier diodes used as protective devices for transistors.
Innovation Solution
A semiconductor device configuration where a buried electrode is positioned on the side opposing the source with respect to the gate electrode, connected to the source, and intruding into the buffer layer, forming a Schottky junction that distributes the electric field laterally, thereby reducing localized stress on the Schottky barrier diode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a Schottky electrode is formed over the surface of a GaN layer in the Schottky junction of the Schottky barrier diode, then the Schottky barrier diode can be used as a protective device for transistors, but the electric field concentrates to a region at the edge of the lower surface of the Schottky electrode opposing the gate electrode, causing current concentration and temperature increase that may damage the diode
Solution Approach 1:
The Schottky electrode is divided into multiple segments: a main Schottky electrode and an extended Schottky electrode. This segmentation distributes the electric field concentration from a single point to multiple regions, reducing the harmful concentration effect at any single location while maintaining the protective function of the Schottky barrier diode
Solution Approach 2:
The Schottky electrode is extended in a direction intersecting the arrangement direction of the drain, gate electrode, and source (forming an L-shape or similar configuration). This dimensional extension moves part of the electric field interaction to a different spatial dimension, reducing concentration at the critical edge region opposing the gate electrode while maintaining overall protective functionality
2Reliability
If the Schottky barrier diode operates as a protective device, then it protects the transistor from damage, but current concentrates to a region of the semiconductor layer forming the Schottky junction opposing the gate electrode, causing temperature increase and potential damage
Solution Approach 1:
By segmenting the Schottky electrode into multiple regions, the current path is distributed across multiple areas of the semiconductor layer. This prevents current concentration in a single localized region, thereby reducing temperature increase and preventing thermal damage to the Schottky barrier diode while maintaining transistor protection
Solution Approach 2:
The extended portion of the Schottky electrode acts as an intermediary structure that redistributes the current flow before it reaches the semiconductor layer. This intermediary extension provides an additional current distribution pathway, reducing localized current density and the resulting temperature increase in critical regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses damage to the Schottky barrier diode by distributing the electric field and current, enhancing its operational reliability as a protective device for transistors.
Implementation Method 1
a Schottky electrode is formed over the surface of a GaN layer in the Schottky junction of the Schottky barrier diode
Data Source
AI summary
A transistor SEL is formed by using a compound semiconductor layer (channel layer CNL). The channel layer CNL is formed over a buffer layer BUF. In a first direction where a drain electrode DRE, a gate electrode GE, and a source electrode SOE of the transistor SEL are arranged, at least a portion of the buried electrode BE is situated on the side opposing the source electrode SOE with reference to the gate electrode GE. The buried electrode BE is connected to the source electrode SOE of the transistor SEL. The top end of the buried electrode BE intrudes into the buffer layer BUF.