Buried Fluidic Channels for Semiconductor Heat Dissipation

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Solution Overview

Problem

Current methods for heat dissipation in semiconductor devices, such as thermal shunts and cooling channels, face issues like thermal gradients and reduced area for device layouts, which can degrade device performance and potentially cause damage.

Innovation Solution

The implementation of buried fluidic channels within a semiconductor substrate, which are in fluid communication with inlet and outlet channels, allows for efficient heat transport and dissipation without creating thermal gradients, enabling denser device and die layouts.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If cooling channels are used for heat dissipation, then heat can be removed from the device, but the area available for device and die layouts is reduced

Engineering Contradiction:
Improveheat dissipationVSAvoidarea for device layout
Core Design Contradiction:
TemperatureVSArea of stationary object

Solution Approach 1:

The fluidic channel is embedded within the buffer layer that is already present in the semiconductor structure, nesting the cooling function within an existing structural layer rather than adding separate cooling channels that would occupy additional space. This allows heat dissipation functionality to be integrated without reducing the area available for device layouts.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Temperature

If thermal shunts are used for heat dissipation, then heat can be removed from the device, but thermal gradients are created that can degrade device performance

Engineering Contradiction:
Improveheat dissipationVSAvoidthermal gradient
Core Design Contradiction:
TemperatureVSStability of the object's composition

Solution Approach 1:

The patent uses a fluidic channel with flowing fluid (liquid or gas) to transport heat away from the semiconductor device. The moving fluid continuously carries heat from the device region through the buffer layer to a heat sink, preventing the formation of stationary thermal gradients that would occur with solid thermal shunts. This hydraulic heat transport mechanism maintains more uniform temperature distribution.

Inventive Principle:
Principle #29Pneumatics and hydraulics

3Temperature

If conventional heat dissipation methods are used, then heat can be removed from the device, but device performance degrades due to thermal gradients

Engineering Contradiction:
Improveheat removalVSAvoiddevice performance
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The buffer layer serves as an intermediary medium that contains the fluidic channel and facilitates heat transfer from the semiconductor device to the heat sink. The flowing fluid within the buffer layer acts as a mediator that continuously transports heat away from the device, preventing thermal gradient formation and maintaining device performance reliability.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively dissipates heat from semiconductor devices to a heatsink, maintaining device performance while allowing for more compact and efficient device layouts by using buried fluidic channels to transport heat without introducing thermal gradients.

Implementation Method 1

a fluidic channel within the device layer comprising the gradient profile; at least one inlet channel in fluid communication with the fluidic channel; and at least one outlet channel in fluid communication with the fluidic channel

Methodology Applied
Scientific EffectFluid flow: Convection

Data Source

PatentUS20240162116A1Structures with buried fluidic channels
Publication Date: 2024.05.16 GLOBALFOUNDRIES US INC
  • US20240162116A1 patent drawing
  • US20240162116A1 patent drawing
  • US20240162116A1 patent drawing

AI summary

The present disclosure relates to semiconductor structures and, more particularly, to structures with buried fluidic channels and methods of manufacture. The structure includes: a semiconductor substrate; a device layer with a gradient profile on the semiconductor substrate; a fluidic channel within the device layer comprising the gradient profile; at least one inlet channel in fluid communication with the fluidic channel; and at least one outlet channel in fluid communication with the fluidic channel.