Buried Gate Trench Capping With Carbon to Reduce Line Interference
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor devices become more highly integrated, controlling interference between neighboring conductive lines has become a difficult issue, particularly in transistors with metal gate electrodes.
Innovation Solution
A semiconductor device with a buried gate structure that includes a trench filled with a buried conductive layer and a capping structure containing a carbon-containing material to reduce electrical interference between neighboring conductive lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal gate electrodes are used to control threshold voltage, then transistor performance is improved, but electrical interference between neighboring conductive lines increases
Solution Approach 1:
A carbon-containing material is introduced as an intermediary substance between the metal gate electrode and the surrounding environment. This material forms a barrier that prevents electrical interference between neighboring conductive lines while allowing the metal gate to maintain its threshold voltage control function. The carbon-containing material acts as a mediator that isolates the conductive lines electrically without compromising the transistor's operational performance.
Solution Approach 2:
The gate structure employs a composite material system consisting of metal gate electrode combined with carbon-containing material. This composite structure integrates the electrical conductivity and threshold voltage control capabilities of metal with the electrical isolation properties of carbon-containing material, thereby achieving both improved transistor performance and reduced electrical interference between adjacent lines.
2Productivity
If semiconductor devices are highly integrated, then device density is improved, but controlling interference between neighboring conductive lines becomes more difficult
Solution Approach 1:
The carbon-containing material serves as an intermediary barrier that enables higher device integration by providing electrical isolation between densely packed conductive lines. This intermediary layer allows devices to be placed closer together while maintaining electrical independence, thereby achieving higher device density without proportionally increasing interference.
Solution Approach 2:
The carbon-containing material is selectively applied in specific locations where electrical isolation is needed, such as between neighboring conductive lines. This localized application provides targeted interference control precisely where it is most needed in high-density integrations, without affecting the overall device performance or requiring blanket modifications across the entire structure.
Data Source
AI summary
A semiconductor device includes: a trench formed in a substrate; a buried conductive layer that gap-fills a portion of the trench; and a capping structure that gap-fills a remaining portion of the trench over the buried conductive layer and includes a carbon-containing material. In the semiconductor device, junction strain may be minimized by reducing the tensile stress of a capping layer.