Buried Gate Depth Differentiation for Array and Periphery Regions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor manufacturing processes require uniform dimensions for both dense and loose areas, leading to inefficiencies and potential performance disparities in electrical components.
Innovation Solution
A semiconductor structure with distinct buried gate structures in array and periphery regions, where the first buried gate structure in the array region has a shallower depth and narrower width compared to the second buried gate structure in the periphery region, allowing for varied component densities and improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If uniform manufacturing process is applied to both dense and loose areas, then manufacturing simplicity is maintained, but component performance and current conductivity are compromised
Solution Approach 1:
The patent applies different manufacturing processes to different regions: the array region receives a first manufacturing process while the periphery region receives a second manufacturing process. This local differentiation allows each region to be optimized for its specific functional requirements, with the periphery region achieving enhanced current conductivity through wider channels while the array region maintains its dense component layout.
2Reliability
If same channel width is used in array and periphery regions, then manufacturing uniformity is maintained, but current conductivity in periphery region is limited
Solution Approach 1:
The patent implements region-specific channel dimensions where the periphery region features wider channels compared to the array region. This local quality differentiation directly enhances current conductivity in the periphery region while maintaining appropriate channel dimensions for the dense array region, resolving the contradiction between uniformity and performance optimization.
3Productivity
If deeper buried gate structure is used in array region, then component density is increased, but performance of periphery region components deteriorates
Solution Approach 1:
The patent employs different buried gate structure depths for different regions: a first depth for the array region optimized for component density, and a second depth for the periphery region optimized for component performance. This local differentiation allows the periphery region to achieve enhanced current conductivity and component performance while the array region maintains high component density.
Solution Approach 2:
The patent segments the substrate into distinct manufacturing regions (array region and periphery region) with independently optimized characteristics. This segmentation enables the periphery region to have wider channels and different buried gate depth specifications without compromising the array region's component density, thereby resolving the performance-dens ity contradiction.
Data Source
AI summary
The present application discloses a semiconductor device including a substrate, a first buried gate structure, and a second buried gate structure. The substrate has an array region and a periphery region. The first buried gate structure is extended from a first surface of the substrate along a first direction into the substrate and disposed in the array region. The second buried gate structure is extended from the first surface of the substrate along the first direction into the substrate and disposed in the periphery region. A depth of the first buried gate structure is less than a depth of the second buried gate structure along the first direction.