Buried Gate Memory Cell Layout for Higher Capacitance
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Solution Overview
Problem
Existing semiconductor devices face challenges in optimizing the design and arrangement of memory cells to enhance performance, stability, and power efficiency.
Innovation Solution
The semiconductor device incorporates a specific structure with a first buried gate, bit-line contacts, storage node contacts, and active regions arranged to overlap with the buried gate, facilitating efficient fabrication and securing necessary resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If memory cells are designed with traditional structures, then fabrication processes are simpler, but memory performance and capacitance are insufficient
Solution Approach 1:
The active region is segmented into multiple distinct regions (first extension region, second extension region, third extension region) with different orientations and functions. This segmentation allows each region to be optimized independently for its specific role in charge transfer and storage, improving overall memory performance while maintaining manageable fabrication complexity through systematic design
Solution Approach 2:
The patent introduces a diagonal direction (third direction) in addition to the traditional first and second directions, creating three-dimensional spatial arrangement of active regions. The third extension region extends in the diagonal direction to overlap with the buried gate, adding a new dimension to charge transfer paths and enhancing capacitance through multi-directional charge collection
2Manufacturing precision
If active regions are arranged with large spacing, then fabrication precision is easier to achieve, but capacitance and power efficiency deteriorate
Solution Approach 1:
Different regions of the active structure are assigned different qualities and functions: the first extension region is optimized for bit-line contact alignment, the second extension region for storage node contact alignment, and the third extension region for maximum overlap with the buried gate. This local optimization allows each region to contribute maximally to capacitance while maintaining regular overall spacing for manufacturability
Solution Approach 2:
Multiple active regions are merged into a unified structure that includes first, second, and third extension regions. The third extension region merges the diagonal charge transfer path with the buried gate overlap, combining multiple functions (charge collection, capacitance enhancement, and spatial efficiency) into a single integrated structure that improves power efficiency without compromising manufacturing precision
Data Source
AI summary
A semiconductor device includes a first buried gate configured to extend in a first direction, a bit-line contact disposed on one side of the first buried gate while being located outside the first buried gate, a storage node contact disposed on the other side of the first buried gate in a diagonal direction of the bit-line contact while being located outside the first buried gate, and active regions arranged spaced apart from each other in the first direction while overlapping with the first buried gate. Each active region includes a first extension region configured to extend in a second direction perpendicular to the first direction while overlapping with the bit-line contact, a second extension region configured to extend in the second direction while overlapping with the storage node contact, and a third extension region configured to extend in a diagonal direction while overlapping with the first buried gate.