Buried Gate Structures With T- and U-Shaped Trench Profiles
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Solution Overview
Problem
The complexity of manufacturing semiconductor devices with buried gate structures increases processing time and costs due to the need for multiple intricate steps and varying trench widths for different device regions.
Innovation Solution
The semiconductor device features buried gate structures with T-shaped and U-shaped profiles formed by depositing semiconductor material in trenches of different widths, allowing these structures to be formed in the same process, thereby simplifying the manufacturing process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple separate processes are used to form buried gate structures in different device regions, then manufacturing precision can be maintained, but manufacturing complexity and processing time increase
Solution Approach 1:
The patent combines the formation of buried gate structures in different device regions (first device region and second device region) into a single integrated process. By forming trenches of different widths simultaneously and filling them with semiconductor material to create lower and upper semiconductor layers in one process flow, the manufacturing complexity is reduced while maintaining precision through controlled etching and deposition steps.
Solution Approach 2:
The patent applies local quality by creating trenches of different widths in different regions of the semiconductor substrate. The first trench has a first width and the second trench has a second width, allowing each region to have optimized gate structure dimensions tailored to its specific functional requirements while being processed together.
2Manufacturing precision
If multiple separate processes are used to form buried gate structures in different device regions, then manufacturing precision can be maintained, but processing time increases
Solution Approach 1:
The patent merges multiple process steps into a single integrated flow where trenches of different widths are formed simultaneously, semiconductor material is deposited in one deposition step, and etching is performed in one etching operation. This consolidation eliminates the need for separate processes for each device region, significantly reducing processing time while maintaining manufacturing precision through controlled process parameters.
Solution Approach 2:
The patent performs preliminary actions by pre-defining the trench structures and gate dielectric layers before the final semiconductor material deposition. This allows the subsequent etching and layer formation to proceed more efficiently in a single process flow, reducing overall processing time.
3Reliability
If conventional manufacturing processes are used, then established manufacturing practices can be maintained, but manufacturing costs increase
Solution Approach 1:
The patent reduces manufacturing costs by combining multiple separate manufacturing operations into a single integrated process. By forming both the first and second buried gate structures in one process flow, the need for multiple separate manufacturing runs is eliminated, reducing overall production costs while maintaining reliability through consistent process control.
Solution Approach 2:
The patent utilizes parameter changes in the etching and deposition processes to achieve different trench widths and semiconductor layer profiles from the same base process. By adjusting parameters such as etching depth, deposition thickness, and material composition, the process maintains reliability across different device regions while reducing manufacturing costs through process consolidation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of buried gate structures in different device regions within the same process, reducing manufacturing time and costs while maintaining the necessary structural profiles for functionality.
Implementation Method 1
depositing a lower semiconductor material over the semiconductor substrate and over the gate dielectric layers
Data Source
AI summary
The present disclosure provide a semiconductor device and a method for preparing the semiconductor device. The semiconductor device includes a first buried gate structure and a second buried gate structure disposed in a semiconductor substrate. The first buried gate structure includes a first gate dielectric layer, and a first lower semiconductor layer disposed over the first gate dielectric layer. The first lower semiconductor layer has a T-shaped profile in a cross-sectional view. The first buried gate structure also includes a first upper semiconductor layer disposed over the first lower semiconductor layer. The second buried gate structure includes a second gate dielectric layer, and a second lower semiconductor layer disposed over the second gate dielectric layer. The second lower semiconductor layer has a U-shaped profile in the cross-sectional view. The second buried gate structure also includes a second upper semiconductor layer disposed over the second lower semiconductor layer.