Buried Inductor Formation in High Resistivity Substrate

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Solution Overview

Problem

Existing methods for buried inductors in ultra-high resistivity wafers for SOI RF applications require an additional insulating layer, increasing manufacturing costs and complexity, as they do not fully utilize the high resistivity properties of the substrate.

Innovation Solution

Buried inductors are formed directly in the high resistivity substrate without an insulating layer, leveraging the substrate's properties for electrical isolation, thereby simplifying the formation process and reducing costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If an insulating layer is formed in the trench between the substrate and the inductor, then electrical isolation is improved, but manufacturing complexity and cost increase

Engineering Contradiction:
Improveelectrical isolationVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent removes the insulating layer from the trench structure, extracting the unnecessary component while relying on the ultra-high resistivity substrate's inherent electrical isolation properties. This simplifies the manufacturing process while maintaining the required electrical isolation performance.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The ultra-high resistivity substrate provides self-isolation capabilities without requiring additional insulating layers. The substrate's inherent high resistivity property serves the isolation function automatically, eliminating the need for separate insulating layer formation processes.

Inventive Principle:
Principle #25Self-service

2Reliability

If an insulating layer is formed in the trench between the substrate and the inductor, then electrical isolation is improved, but manufacturing cost increases

Engineering Contradiction:
Improveelectrical isolationVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent eliminates the insulating layer formation step, removing the associated material costs and processing expenses. The ultra-high resistivity substrate's natural properties provide the necessary isolation without additional manufacturing expenditures.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The substrate's ultra-high resistivity property provides self-isolation, eliminating the need for separate insulating layer materials and formation processes, thereby reducing manufacturing costs while maintaining electrical isolation performance.

Inventive Principle:
Principle #25Self-service

3Reliability

If an insulating layer is formed in the trench, then substrate insulation is improved, but process time increases

Engineering Contradiction:
Improvesubstrate insulationVSAvoidprocess time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent removes the insulating layer formation step from the manufacturing sequence, eliminating the time required for depositing, patterning, and etching the insulating layer. The ultra-high resistivity substrate provides inherent isolation without these time-consuming processes.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach simplifies the manufacturing process, reduces costs, and enhances the efficiency of buried inductors by eliminating the need for additional insulation, resulting in higher quality factors and improved inductive performance.

Implementation Method 1

a high resistivity substrate and a buried inductor formed directly in the high resistivity substrate and devoid of an insulating layer therebetween

Methodology Applied
Scientific EffectElectrical resistivity: Electrical Resistance

Data Source

PatentUS8487379B2Structure and method for buried inductors for ultra-high resistivity wafers for SOI/RF SiGe applications
Publication Date: 2013.07.16 GLOBALFOUNDRIES US INC
  • US8487379B2 patent drawing
  • US8487379B2 patent drawing
  • US8487379B2 patent drawing

AI summary

A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high resistivity substrate and a buried inductor formed directly in the high resistivity substrate and devoid of an insulating layer therebetween.