Buried Interconnect Layout Across Trench Isolation for Dense Routing
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Solution Overview
Problem
Existing semiconductor technologies face challenges in achieving high routing density and reducing latency in dense logic and memory blocks due to limitations in wire routing and trench isolation structures.
Innovation Solution
The implementation of buried interconnect structures made of metal materials within the semiconductor substrate, which cross trench isolation structures, along with via interconnects that contact the buried interconnects and extend through the trench isolation structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional wire routing methods are used, then the routing structure is simple to manufacture, but the routing density is limited and latency increases
Solution Approach 1:
The patent introduces buried interconnect structures that route signals through the substrate depth dimension, crossing beneath trench isolation structures. This vertical dimension addition enables signals to bypass surface routing constraints, achieving approximately 30% higher routing density without proportionally increasing manufacturing complexity.
2Reliability
If trench isolation structures are used to separate devices, then device isolation and electrical separation are improved, but wire routing flexibility is reduced
Solution Approach 1:
The buried interconnect structure is nested within the substrate and passes through the trench isolation structure. The via interconnect structure is nested within the trench isolation to provide electrical contact. This nesting allows device isolation to be maintained while enabling routing flexibility through the isolated regions.
Solution Approach 2:
The via interconnect structure acts as an intermediary element that bridges the buried interconnect structure and the surface wiring. It extends through the trench isolation structure to provide electrical contact, enabling routing flexibility while maintaining the isolation function of the trench structure.
3Loss of time
If routing density is increased to reduce latency, then signal transmission speed improves, but manufacturing precision requirements increase
Solution Approach 1:
The buried interconnect structure is formed in the substrate before the trench isolation structure is completed. This preliminary formation allows the interconnect to be established at optimal positions and depths, reducing the precision requirements for subsequent alignment steps when forming vias through the isolation structure.
Data Source
AI summary
The present disclosure relates to semiconductor structures and, more particularly, to buried interconnect structures and methods of manufacture. The structure includes: a semiconductor substrate; a trench isolation structure extending into the semiconductor substrate; and at least one buried interconnect structure in the semiconductor substrate and crossing the trench isolation structure.