Buried-Layer Containment Structure for Precise Semiconductor Implantation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing methods for fabricating semiconductor devices with buried layers face challenges in achieving precise ion implantation depth and thickness, particularly with thick base semiconductor materials, and require multiple masks, increasing fabrication complexity and defect formation.
Innovation Solution
A semiconductor device fabrication process using a single mask to form a containment structure with a buried layer and encircling sidewall, allowing for precise ion implantation and epitaxial deposition to achieve thicker base semiconductor materials without the need for additional masks, thereby reducing complexity and improving yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masks are used for ion implantation to achieve precise buried layer depth and thickness, then manufacturing precision is improved, but device complexity and fabrication time increase
Solution Approach 1:
The patent applies preliminary action by forming a containment structure (isolation layer with sidewalls) before ion implantation. This containment structure pre-defines the implantation region boundaries, allowing subsequent ion implantation to automatically achieve precise depth and thickness control without requiring multiple masks. The containment structure is formed in advance to guide the ion implantation process.
Solution Approach 2:
The patent introduces a containment structure (isolation layer with encircling sidewalls) as an intermediary element between the ion implantation source and the base semiconductor material. This intermediary structure acts as a physical mask and depth control mechanism, enabling precise buried layer formation through a single ion implantation step rather than multiple masked steps.
2Manufacturing precision
If multiple masks are used for ion implantation, then manufacturing precision is improved, but fabrication time is increased
Solution Approach 1:
The containment structure is formed in advance before ion implantation, pre-establishing the geometric constraints that will control the buried layer formation. This preliminary structuring eliminates the need for sequential masking steps during ion implantation, thereby reducing fabrication time while maintaining precision.
Solution Approach 2:
The patent merges the functions of multiple masks into a single containment structure that provides both lateral boundary definition and depth control. By combining these functions into one pre-formed structure, the number of sequential steps is reduced, decreasing fabrication time while achieving the same precision goals.
3Manufacturing precision
If ion implantation is used for thick base semiconductor materials, then manufacturing precision is improved, but ion implantation depth control becomes more difficult
Solution Approach 1:
The containment structure (isolation layer with sidewalls) serves as an intermediary that provides physical depth reference and lateral confinement during ion implantation into thick base semiconductor materials. The sidewalls of the containment structure act as a template that guides ion penetration depth, making depth control easier even for thick substrates.
Solution Approach 2:
The patent applies local quality by creating a containment structure with specific geometric properties (sidewall angle, height, and position) that are optimized for the intended ion implantation parameters. The local geometry of the containment structure provides tailored depth and lateral control for the ion implantation process into thick materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of semiconductor devices with thicker base semiconductor materials and improved precision, reducing fabrication time and complexity while enhancing device yield and packing density.
Implementation Method 1
forming a containment structure with a buried layer and encircling sidewall, allowing for precise ion implantation
Implementation Method 2
allowing for precise ion implantation and epitaxial deposition to achieve thicker base semiconductor materials
Data Source
AI summary
In a semiconductor manufacturing method, a mask is disposed on a semiconductor layer or semiconductor substrate. The semiconductor layer or semiconductor substrate is etched in an area delineated by the mask to form a cavity. With the mask disposed on the semiconductor layer or semiconductor substrate, the cavity is lined to form a containment structure. With the mask disposed on the semiconductor layer or semiconductor substrate, the containment structure is filled with a base semiconductor material. After filling the containment structure with the base semiconductor material, the mask is removed. At least one semiconductor device is fabricated in and/or on the base semiconductor material deposited in the containment structure.