Buried Layer Containment Structure for Precise Deep Ion Implantation
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Solution Overview
Problem
Existing semiconductor device fabrication processes face challenges in achieving precise ion implantation for deep buried layers, particularly when dealing with thick base semiconductor materials, which limits device thickness and introduces complexity and defects due to the use of multiple masks.
Innovation Solution
The proposed solution involves a semiconductor device fabrication process that uses a single mask to form a containment structure with a buried layer and an encircling sidewall, allowing for precise ion implantation and epitaxial deposition to achieve a thicker base semiconductor material without the limitations of multiple masks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masks are used for ion implantation to form deep buried layers, then the precision of ion implantation is improved, but the device complexity and fabrication time increase
Solution Approach 1:
The patent segments the ion implantation process into multiple sequential steps, each targeting a specific depth range. First, a shallow implantation is performed to create an initial buried layer, then a deeper implantation is performed to extend the buried layer to the desired depth. This segmentation allows precise control over the depth and concentration profile of the buried layer while avoiding the need for complex single-step implantation, thus reducing overall fabrication complexity.
2Manufacturing precision
If multiple masks are used for ion implantation to form deep buried layers, then the precision of ion implantation is improved, but the fabrication time is increased
Solution Approach 1:
The patent applies preliminary action by first forming a shallow buried layer that serves as a foundation for subsequent deeper implantation. This preliminary structure guides the second implantation step, ensuring precise positioning and reducing the need for additional masking steps. The preliminary buried layer acts as a template that simplifies the overall process and reduces total fabrication time while maintaining high precision.
3Length of stationary object
If the base semiconductor material is made thicker to enhance device performance, then the device performance is improved, but the precision of ion implantation for deep buried layers deteriorates
Solution Approach 1:
The patent transitions from a single-depth implantation approach to a multi-dimensional depth approach by performing implantation in sequential steps at different depths. The first implantation targets a shallow depth to create an initial buried layer, and the second implantation targets a greater depth to extend the buried layer through the thicker base material. This dimensional approach to depth control enables precise ion implantation even in thicker substrates where single-step implantation would lose precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of semiconductor devices with thicker base semiconductor materials, improves precision and reduces fabrication time and complexity, leading to enhanced device yield and performance.
Implementation Method 1
a buried layer formed by ion implantation
Implementation Method 2
epitaxial deposition to achieve a thicker base semiconductor material
Data Source
AI summary
In a semiconductor manufacturing method, a mask is disposed on a semiconductor layer or semiconductor substrate. The semiconductor layer or semiconductor substrate is etched in an area delineated by the mask to form a cavity. With the mask disposed on the semiconductor layer or semiconductor substrate, the cavity is lined to form a containment structure. With the mask disposed on the semiconductor layer or semiconductor substrate, the containment structure is filled with a base semiconductor material. After filling the containment structure with the base semiconductor material, the mask is removed. At least one semiconductor device is fabricated in and/or on the base semiconductor material deposited in the containment structure.