Buried Layer Formation via Sacrificial Photosensitive Mask
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Solution Overview
Problem
Existing methods for forming buried layers in integrated circuits are destructive to the upper substrate, unable to create empty areas or portions of specific materials, and struggle with controlling layer thickness and shape.
Innovation Solution
A method involving the formation of a photosensitive layer and a given material layer on a substrate, followed by selective exposure and removal using an electron beam and plasma, allowing for the creation of empty areas or portions of any shape under the given material layer, which can be filled with different materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation technique is used to form buried layers, then buried layers can be formed in substrate, but the upper part of the substrate is destroyed and the thickness of buried layer is difficult to control
Solution Approach 1:
A sacrificial layer is introduced as an intermediary between the substrate and the final structure. This sacrificial layer can be selectively removed through plasma treatment to create precise voids or buried layers without damaging the substrate or upper layers, solving both the precision control and substrate protection problems
Solution Approach 2:
The sacrificial layer is deposited and patterned in advance before the final structural layers are formed. This preliminary structuring allows precise definition of where voids or buried layers will eventually form, enabling controlled thickness and shape without subsequent destructive operations
2Adaptability or versatility
If etching technique is used to remove portions of silicon layer for SON device formation, then underlying silicon/germanium layer can be removed, but the deposited dielectric or conductive layer necessarily has shape identical to the silicon/germanium layer
Solution Approach 1:
The sacrificial layer acts as a mediator that defines the desired final shape independently from the underlying structure. After the sacrificial layer is selectively removed, materials can be deposited in the void spaces to create structures with shapes that differ from the original silicon/germanium layer, enabling versatile shape control
Solution Approach 2:
The structure is segmented into multiple functional layers with independent patterning. The sacrificial layer can be selectively removed in specific regions while leaving other areas intact, allowing different shapes and configurations in different parts of the device, thereby increasing adaptability
3Manufacturing precision
If conventional buried layer formation methods are used, then buried layers can be formed, but empty areas or portions of specific materials cannot be created with high precision
Solution Approach 1:
The sacrificial layer serves as a precise template that can be removed to create empty areas or to define regions for subsequent material deposition. This intermediary approach enables both empty space creation and precise material placement with high manufacturing precision
Solution Approach 2:
The properties of the sacrificial layer (thickness, material composition, pattern geometry) can be varied to control the final structure parameters. By changing these parameters, the method can create different shapes, sizes, and configurations of empty areas or material portions, enhancing versatility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables non-destructive formation of empty areas and portions of any shape under a given material layer with high accuracy, allowing for precise control over the shape and material, improving integrated circuit manufacturing by enhancing the flexibility and precision of buried layer formation.
Implementation Method 1
insolating a portion of the photosensitive layer or its complement according to whether the photosensitive layer is positive or negative with an electron beam crossing the layer of the given material
Implementation Method 2
insolating a portion of the photosensitive layer or its complement according to whether the photosensitive layer is positive or negative
Implementation Method 3
the removal of said portion of the photosensitive layer is performed by means of a plasma, said portion volatilizing after transformation in crossing said layer of the given material
Implementation Method 4
said portion volatilizing after transformation in crossing said layer of the given material
Data Source
AI summary
A method for forming an empty area under a layer of a given material, including forming on a substrate a stacking of a photosensitive layer and of a layer of the given material; insolating a portion of the photosensitive layer or its complement according to whether the photosensitive layer is positive or negative with an electron beam crossing the layer of the given material; and removing the portion of the photosensitive layer.