Buried Magnetic Sensor Vertical Stacking for Sensitivity

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Solution Overview

Problem

Conventional magnetic sensors are limited in size reduction due to the placement of analog and digital circuitry in a horizontal direction relative to the magnetic field sensing device, leading to increased device size and reduced sensitivity.

Innovation Solution

A buried magnetic sensor is developed using a silicon on insulator (SOI) substrate with the magnetic field sensing device embedded within, and circuitry positioned on top, minimizing external influences and optimizing the sensor area.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If analog and digital circuitry are positioned in a horizontal direction with respect to the magnetic field sensing device, then the device can be manufactured using conventional processes, but the size of the magnetic sensor increases and sensitivity decreases

Engineering Contradiction:
ImprovemanufacturabilityVSAvoidsensitivity
Core Design Contradiction:
Ease of manufactureVSMeasurement precision

Solution Approach 1:

The patent positions the analog and digital circuitry in a vertical direction above the magnetic field sensing device rather than in a horizontal direction, utilizing the third dimension (z-axis) to resolve the contradiction between ease of manufacture and measurement precision

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The circuitry is positioned above the magnetic field sensing device in a stacked configuration, with the sensor embedded in the substrate and circuitry layers above it, creating a nested vertical structure that reduces lateral footprint while maintaining functionality

Inventive Principle:
Principle #7Nested doll (Nesting)

2Area of stationary object

If the size of the magnetic sensor is reduced, then the total size of the IC chip decreases, but the sensitivity of the device regarding the earth's magnetic field decreases

Engineering Contradiction:
Improvesensor sizeVSAvoidsensitivity
Core Design Contradiction:
Area of stationary objectVSMeasurement precision

Solution Approach 1:

The patent uses vertical stacking to reduce the lateral area of the sensor while maintaining sensitivity through improved current flow control and minimized external influences on the sensing element

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Measurement precision

If circuitry is positioned above the magnetic field sensing device in a vertical direction, then the size of the magnetic sensor is reduced and sensitivity is enhanced, but the device complexity increases

Engineering Contradiction:
ImprovesensitivityVSAvoidstructural complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The device is segmented into distinct functional layers: the magnetic field sensing device embedded in the substrate, the buried oxide layer for isolation, and the circuitry layers above, allowing independent optimization of each segment while reducing overall complexity

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces the size of the magnetic sensor while enhancing sensitivity and noise reduction by controlling current flow and minimizing defects, allowing for more precise magnetic field detection.

Implementation Method 1

A magnetic field sensing device, or Hall device, is a device that identifies a direction and a magnitude of magnetic field by use of a Hall effect

Methodology Applied
Scientific EffectHall effect: Hall Effect

Data Source

PatentUS10700265B2Semiconductor device having circuitry positioned above a buried magnetic sensor
Publication Date: 2020.06.30 SK KEYFOUNDRY INC
  • US10700265B2 patent drawing
  • US10700265B2 patent drawing
  • US10700265B2 patent drawing

AI summary

A semiconductor device including a circuitry, a magnetic sensor, and a buried oxide. The circuitry is formed on a substrate. The magnetic sensor has a sensing area formed under the circuitry. The buried oxide is disposed between the circuitry and the magnetic sensor. The sensing area comprises an N-doped area and a P-doped area doped deeper than the N-doped area, and sensor contacts connect the sensing area with the circuitry through the buried oxide.