Buried Mg-Doped III-Nitride Activation via Ion-Implanted Hydrogen Paths
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Solution Overview
Problem
Activating buried magnesium-doped regions in III-Nitride semiconductor layers is challenging due to hydrogen bonding, which forms complexes that prevent Mg from behaving as an acceptor, especially in devices with buried layers, limiting device performance and development.
Innovation Solution
Using ion implantation to create a hydrogen diffusion path and applying thermal treatment to diffuse out hydrogen without damaging ohmic contacts, thereby activating buried p-type regions in III-Nitride and III-V materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thermal treatment is applied to diffuse out hydrogen from buried Mg-doped III-Nitride layers, then Mg activation is improved, but the process becomes ineffective when layers are buried beneath Si-doped or n-type layers due to hydrogen diffusion barriers
Solution Approach 1:
The patent segments the diffusion path by creating localized openings through the overlying layers using ion implantation. Instead of attempting to diffuse hydrogen through the entire buried structure, the method divides the problem into discrete regions where ion-implanted columns provide dedicated hydrogen escape routes, allowing Mg activation without requiring complete removal or modification of the overlying Si-doped or n-type layers.
Solution Approach 2:
The patent introduces ion-implanted regions as intermediary pathways that facilitate hydrogen diffusion. These ion-implanted columns act as mediators between the buried Mg-doped layer and the atmosphere, providing a controlled route for hydrogen to escape while maintaining the integrity of the overlying device layers.
2Reliability
If dry etch is used to create via to expose buried CBL for hydrogen diffusion, then Mg activation is improved, but ohmic contact formation is damaged due to etch-induced damage
Solution Approach 1:
The patent uses ion-implanted regions as intermediary structures that provide hydrogen diffusion pathways without requiring dry etching. These ion-implanted columns serve as non-damaging alternatives to etched vias, allowing hydrogen to escape from the buried Mg-doped layer while preserving the quality of ohmic contacts that would otherwise be damaged by etch-induced defects.
Solution Approach 2:
The patent replaces the mechanical dry etching process with an ion implantation-based approach. Instead of physically removing material through etching, the method uses ion implantation to create diffusion pathways, substituting a less damaging physical process for the harmful mechanical removal process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively activates buried p-type regions, enhancing device performance by reducing hydrogen concentration and maintaining intact ohmic contacts, suitable for vertical transistors, photonic devices, and other III-Nitride devices.
Implementation Method 1
creating a diffusion path by using ion implantation
Implementation Method 2
applying a thermal treatment to diffuse out hydrogen through the ion implanted path
Implementation Method 3
applying a thermal treatment to diffuse out hydrogen through the ion implanted path and to cause activation of the buried region
Data Source
AI summary
In certain examples, methods and semiconductor structures are directed to use of a doped buried region (e.g., Mg-dopant) including a III-Nitride material and having a diffusion path (“ion diffusion path”) that includes hydrogen introduced by using ion implantation via at least one ion species. An ion implantation thermal treatment causes hydrogen to diffuse through the ion implanted path and causes activation of the buried region. In more specific examples in which such semiconductor structures have an ohmic contact region at which a source of a transistor interfaces with the buried region, the ohmic contact region is without etching-based damage due at least in part to the post-ion implantation thermal treatment.