Buried Rail Power Delivery Layout for FinFET Reliability
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Solution Overview
Problem
Existing integrated circuit devices face challenges in reliably transmitting power due to the complexity and miniaturization of highly integrated circuit devices, which requires efficient and reliable power delivery networks.
Innovation Solution
The integrated circuit device incorporates a substrate with fin-type active regions, a device separation layer, source/drain regions, conductive plugs, power wiring lines, buried rails, and power vias, along with insulating barriers, to form a power delivery network that ensures reliable power transmission. This configuration includes tapered power holes and vias with varying insulating barrier thicknesses to facilitate efficient power distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integrated circuit devices are down-scaled and highly integrated, then device functionality and integration density are improved, but power transmission reliability deteriorates
Solution Approach 1:
The power delivery network is segmented into multiple components: power wiring lines on the substrate, buried rails in trenches, power vias for vertical connections, and insulating barriers. This segmentation allows each component to be optimized independently while maintaining overall power transmission reliability in highly integrated devices
Solution Approach 2:
Different regions of the power delivery network have different insulating barrier thicknesses: a first insulating barrier with first thickness in the device separation layer, and a second insulating barrier with second thickness in the inter-gate insulating layer. This local quality variation optimizes power transmission reliability for specific local conditions while maintaining high integration density
2Reliability
If insulating barrier thickness is increased to improve power transmission reliability, then power delivery stability is improved, but manufacturing complexity and process difficulty increase
Solution Approach 1:
The patent applies different insulating barrier thicknesses in different locations: a first thickness for the first insulating barrier and a second thickness for the second insulating barrier. This local differentiation allows optimization of power delivery stability in critical areas without unnecessarily increasing manufacturing complexity across the entire device
Solution Approach 2:
The insulating barriers are formed as part of the trench filling process before device operation. The device separation layer and inter-gate insulating layer are prepared in advance with appropriate barrier thicknesses, eliminating the need for additional post-processing steps and reducing manufacturing complexity
Data Source
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AI summary
An integrated circuit device includes a substrate, having a front surface and a rear surface opposite to each other, and a fin-type active region defined by a trench in the front surface, a device separation layer filling the trench, a source/drain region on the fin-type active region, a first conductive plug arranged on the source/drain region and electrically connected to the source/drain region, a power wiring line at least partially arranged on a lower surface of the substrate, a buried rail connected to the power wiring line through the device separation layer and decreasing in horizontal width toward the power wiring line, and a power via connecting the buried rail to the first conductive plug.