Buried Region in High-Voltage Semiconductor Device
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Ultra-high voltage semiconductor devices face limitations in achieving high breakdown voltage and low specific on-resistance due to the interaction between the n-grade region and p-top region, where the maximum doping concentration in the n-grade region is constrained by the p-top region's doping concentration.
Innovation Solution
Incorporating a P-type buried region between the drift and drain regions in the high-voltage well, which assists in forming a full depletion region, allowing for a decrease in the doping concentration in the p-top region or an increase in the n-grade region, thereby reducing the specific on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a buried region is added to the high-voltage well, then the specific on-resistance decreases, but the device structure becomes more complex
Solution Approach 1:
The invention merges the formation of the buried region with the existing high-voltage well structure. The buried region is integrated into the high-voltage well during the fabrication process, combining multiple functions (depletion region formation, doping concentration control, and structural support) into a unified structure that minimizes additional complexity.
Data Source
AI summary
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate, a drift region formed in the high-voltage well, a drain region formed in the high-voltage well and spaced apart from the drift region, and a buried region having the first conductivity type formed in the high-voltage well between the drift region and the drain region.