Buried Ridge Optoelectronic Structure With Nitride Heat Insulation
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Solution Overview
Problem
Current buried ridge structures in optoelectronic devices face inadequate heat dissipation and electrical insulation issues, particularly in high-power applications, leading to performance degradation and potential device damage.
Innovation Solution
A heterostructure with a crest embedded in a nitride coating, specifically aluminum nitride or boron nitride, which provides improved thermal conductivity and electrical insulation, combined with a manufacturing process that avoids aggressive etching to protect the structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a benzocyclobutene (BCB) coating is used for the buried ridge structure, then electrical insulation is improved, but heat dissipation deteriorates due to low thermal conductivity
Solution Approach 1:
The patent employs a composite coating structure consisting of multiple layers with different materials and functions. The first coating layer (BCB or similar polymer) provides electrical insulation, while the second coating layer (metal nitride such as AlN, SiN, or BN) provides high thermal conductivity for heat dissipation. This composite approach allows simultaneous achievement of both electrical insulation and effective heat dissipation, resolving the contradiction between these two requirements.
2Temperature
If a metal-doped semiconductor coating layer is used, then heat dissipation is improved, but electrical insulation deteriorates leading to increased loss currents and parasitic capacitances
Solution Approach 1:
The patent employs a composite coating structure consisting of multiple layers with different materials and functions. The first coating layer (BCB or similar polymer) provides electrical insulation, while the second coating layer (metal nitride such as AlN, SiN, or BN) provides high thermal conductivity for heat dissipation. This composite approach allows simultaneous achievement of both electrical insulation and effective heat dissipation, resolving the contradiction between these two requirements.
3Manufacturing precision
If aggressive etching solutions are used to manufacture the buried ridge structure, then manufacturing precision is improved, but device reliability deteriorates due to potential damage to the crested heterostructure
Solution Approach 1:
The patent introduces a sacrificial layer (such as SiO2, Si3N4, or organic polymer) as an intermediary material during the fabrication process. This sacrificial layer is deposited over the ridge structure before the nitride coating layer. The sacrificial layer can be selectively removed through localized etching without damaging the underlying ridge structure, as it serves as a protective intermediary. This approach enables precise manufacturing while preserving device integrity.
Solution Approach 2:
The patent applies the nitride coating layer over the ridge structure before performing the localized etching to create the buried ridge configuration. This preliminary coating action protects the ridge structure from damage during subsequent etching operations. The nitride layer serves as a protective barrier that can withstand the etching process, allowing precise fabrication while maintaining device integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances heat dissipation and electrical insulation, enabling high-frequency and high-power operation while maintaining device stability and reliability, and allows for flip-chip assembly.
Implementation Method 1
a nitride coating layer, in which said guide ribbon is buried... offers considerable advantages in terms of performance improvement, heat dissipation
Implementation Method 2
a nitride coating layer, in which said guide ribbon is buried... offers considerable advantages in terms of performance improvement, heat dissipation, and electrical insulation
Data Source
Figure 1
Figure 2~3a
Figure 3b~3c
AI summary
The invention relates to an optoelectronic component comprising a stacking of layers on a substrate along a stacking direction; said stacking comprising: - a crest heterostructure comprising a base and a guide ribbon extending along a guide direction orthogonal to the stacking direction, the guide ribbon being configured to propagate a confined light wave; - a nitride coating layer, in which said guide ribbon is buried.