Buried Source Line Memory With Slit Structure

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Solution Overview

Problem

The existing semiconductor memory devices with buried source lines face challenges in reducing the plane size of the memory cell array due to the need for local interconnections that supply bias to each finger, which interferes with the reduction of the cell array's size.

Innovation Solution

The semiconductor device incorporates a buried source line with a columnar portion extending in the stacking direction, featuring a semiconductor body and charge storage film, and uses a unique slit structure to reduce the number of local interconnections required, allowing for a more compact design by eliminating the need for highly doped semiconductor regions under every finger.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If a buried source line is implemented, then the source line can be positioned under the stacked body, but local interconnections must be provided in every finger to supply bias to the substrate, which increases device complexity and interferes with reducing the plane size of the memory cell array

Engineering Contradiction:

Improveplane size of memory cell arrayVSAvoidnumber of local interconnections

Core Design Contradiction:

Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent merges multiple local interconnections into a single common interconnection structure. Instead of providing separate local interconnections for each finger, the invention uses a shared interconnection that serves multiple fingers simultaneously, thereby reducing the overall number of interconnections and simplifying the device structure while maintaining the buried source line configuration

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The common interconnection structure is designed to serve multiple functions and multiple fingers simultaneously. This universal interconnection replaces the need for dedicated local interconnections in each finger, reducing device complexity while enabling the buried source line implementation to achieve compact memory cell array design

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS20170263636A1Stacked non-volatile semiconductor memory device with buried source line and method of manufacture

Publication Date: 2017.09.14 KIOXIA CORP

AI summary

According to one embodiment, a semiconductor device includes a first interconnection, a first semiconductor region, a stacked body, a columnar portion, first insulators, and arrays. The first interconnection is provided on a substrate via a first insulating film interposed. The first semiconductor region is provided on the first interconnection via a second insulating film. The stacked body is provided on the first semiconductor region. The columnar portion is provided in the stacked body. The first insulators are provided in the stacked body. The first insulators extend in the stacking direction and a first direction crossing the stacking direction. The arrays are provided in the first semiconductor region. The arrays each include second semiconductor regions. The second semiconductor regions are separated from each other. The second semiconductor regions are provided under the first insulators. The second semiconductor regions are electrically connected to the first interconnection.