Buried Temperature Probe in Integrated Circuit Substrate
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Solution Overview
Problem
Current methods struggle to accurately measure temperature inside integrated circuits, particularly in 3D integrated circuits, where hot spots deep within the substrate are difficult to detect due to limitations in existing measurement techniques.
Innovation Solution
An integrated circuit design featuring a temperature probe with a junction formed by two electrical conductors buried at least 5 μm deep inside the substrate, utilizing materials with a Seebeck coefficient greater than 1 μV/K at 20°C, allowing for direct measurement of internal temperatures through voltage differences at surface bump contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If surface temperature measurement methods are used, then measurement simplicity is maintained, but measurement precision inside the substrate deteriorates
Solution Approach 1:
The patent transitions from surface-only temperature measurement to internal substrate measurement by embedding the temperature probe at a depth of at least 5 μm within the substrate. This dimensional change allows direct measurement of internal temperatures where hot spots occur, resolving the contradiction between measurement simplicity and internal temperature measurement accuracy.
2Device complexity
If simulation software with mathematical models is used to estimate internal temperature, then direct measurement inside substrate is avoided, but measurement precision deteriorates due to model imprecision
Solution Approach 1:
The temperature probe structure is integrated directly into the substrate fabrication process using standard microelectronics methods. The probe serves dual purposes: it is both a structural element embedded in the substrate and a measurement sensor. This self-service approach eliminates the need for separate measurement systems while providing accurate internal temperature data.
3Measurement precision
If temperature probe junction is buried at least 5 μm deep inside substrate, then measurement precision inside substrate improves, but device complexity increases
Solution Approach 1:
The patent merges the temperature probe fabrication with the standard integrated circuit manufacturing process. The same photolithography, etching, and deposition techniques used for creating electronic components are also used to form the temperature probe structure. This merging eliminates the need for separate, complex fabrication steps while achieving the required measurement precision.
Solution Approach 2:
The temperature probe structure uses materials and fabrication methods that are universal to integrated circuit manufacturing. The conductors are formed from standard conductive materials, and the insulation layers use conventional dielectric materials. This universality allows the probe to be manufactured using existing semiconductor fabrication infrastructure, reducing overall device complexity.
4Manufacturing precision
If standard microelectronics fabrication methods are used for temperature probe, then manufacturing precision is maintained, but ability to measure deep internal temperature deteriorates
Solution Approach 1:
The temperature probe structure is prepared in advance during the substrate fabrication process, before the substrate is completed. The conductor patterns are defined, insulating layers are deposited, and the probe structure is formed while the substrate is still being manufactured. This preliminary action ensures that the probe reaches the required burial depth of at least 5 μm while maintaining manufacturing precision through controlled fabrication steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise temperature measurement inside the substrate, improving heat management in integrated circuits by accurately identifying hot spots and their thermal diffusion patterns.
Implementation Method 1
The first and second ends are entirely buried to at least 5 μm depth inside the substrate and produced, respectively, in different first and second materials chosen for the absolute value of the Seebeck coefficient of the junction to be greater than 1 μV/K at 20° C.
Data Source
AI summary
This integrated circuit comprises:a substrate,a first electrical conductor comprising a first end, the first electrical conductor being electrically insulated from the substrate,a second electrical conductor comprising a second end, the second electrical conductor being electrically insulated from the substrate and electrically insulated from the first electrical conductor except at the second end which is mechanically and electrically directly in contact with the first end to form an electrical junction.The first and second ends are entirely buried to at least 5 μm depth inside the substrate and produced, respectively, in different first and second materials chosen for the absolute value of the Seebeck coefficient of the junction to be greater than 1 μV/K at 20° C. such that the combination of these first and second conductors forms a temperature probe.