Vertical Buried Via MIM Capacitor for IC Power Surge Delivery

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Solution Overview

Problem

Existing integrated circuits face challenges in efficient power delivery due to sudden power demands, as typical interconnects between front-side and back-side layers often deplete charge before it can be replenished, and planar capacitors consume substantial area that could be used for other circuits or signals.

Innovation Solution

The implementation of cylindrical metal-insulator-metal (MIM) capacitors that span metal layers from the front-side to the back-side, allowing for immediate surge current delivery while occupying less area, formed through a vertical metallization structure with a dielectric material between metal electrodes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If planar capacitors are used for power delivery, then charge storage capability is improved, but area consumption increases substantially

Engineering Contradiction:
Improvecharge storage capabilityVSAvoidarea consumption
Core Design Contradiction:
Quantity of substanceVSArea of stationary object

Solution Approach 1:

The patent transitions from planar (2D) capacitor design to three-dimensional vertical capacitor structures. The vertical capacitors extend through multiple metallization layers in the vertical dimension, achieving high charge storage capability without occupying excessive planar area. This dimensional transition allows the capacitor to utilize the vertical space between front-side and back-side metallization layers, effectively decoupling charge storage capacity from area consumption.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Device complexity

If typical interconnects are used between front-side and back-side layers, then power delivery is simplified, but charge replenishment speed deteriorates during sudden power demands

Engineering Contradiction:
Improvepower delivery structure simplicityVSAvoidcharge replenishment speed
Core Design Contradiction:
Device complexityVSSpeed

Solution Approach 1:

The vertical capacitors are positioned in close proximity to high-power-consuming components and pre-stored charge is maintained in these capacitors in advance. When sudden power demands occur, the pre-stored charge can be immediately delivered through the vertical interconnects, eliminating the delay associated with charge replenishment from distant power sources. This preliminary charge storage action ensures rapid response to power surges while maintaining a relatively simple power delivery architecture.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enhances power delivery capabilities, meets current requirements, and frees up area for other circuits or signals by providing immediate surge currents and efficient charge storage, reducing the likelihood of power droop in computationally intensive systems.

Implementation Method 1

cylindrical metal-insulator-metal (MIM) capacitors that span metal layers from the front-side to the back-side... formed through a vertical metallization structure with a dielectric material between metal electrodes

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentEP4345894A1Buried via through front-side and back-side metallization layers with optional cylindrical MIM capacitor
Publication Date: 2024.04.03 INTEL CORP
  • EP4345894A1 patent drawingFigure 1
  • EP4345894A1 patent drawingFigure 2~3
  • EP4345894A1 patent drawingFigure 4A~4B

AI summary

An integrated circuit (IC) die includes a plurality of front-side metallization layers including a first front-side metallization layer and one or more additional front-side metallization layers, a plurality of back-side metallization layers formed on the plurality front side metallization layers including a first back-side metallization layer and one or more additional back-side metallization layers, wherein the first front-side metallization layer is proximate to the first back-side metallization layer, and a vertical metallization structure formed through at least the first front-side metallization layer and the first back-side metallization layer, wherein the vertical metallization structure electrically connects a first metallization structure on one of the one or more additional front-side metallization layers to a second metallization structure on one of the one or more additional back-side metallization layers. Other embodiments are disclosed and claimed.