Busbar Terminal Insulation Layout for Low-Inductance Power Modules
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Solution Overview
Problem
Existing semiconductor devices and busbars face an increase in size and inductance due to the need for increased space between terminals to ensure insulation, which is not efficiently addressed by existing methods.
Innovation Solution
The semiconductor device and busbar design incorporates a second terminal with a sheathed part that extends beyond the first terminal, ensuring a longer distance from the sealing body while maintaining insulation performance, thereby reducing the space required between terminals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the space between the first lead terminal and the second lead terminal is increased to ensure insulation performance, then the insulation performance is improved, but the device size and inductance increase
Solution Approach 1:
The patent transitions from ensuring insulation through horizontal spacing to achieving it through vertical extension of the sheathed part. The sheathed part extends in the projection direction beyond the first terminal's exposed part, creating insulation distance in the depth dimension rather than requiring increased lateral space between terminals.
Solution Approach 2:
The sheathed part acts as an intermediary insulating structure between the second terminal and the first terminal. By extending the sheathed part beyond the first terminal's exposed part, it creates an insulating barrier that ensures creepage distance without requiring increased space between the terminals themselves.
2Reliability
If the space between the first lead terminal and the second lead terminal is increased to ensure insulation performance, then the insulation performance is improved, but the inductance increases
Solution Approach 1:
The patent resolves the inductance issue by moving the insulation mechanism from the lateral dimension to the depth dimension. The sheathed part's extension beyond the first terminal's exposed part in the projection direction provides the necessary insulation without increasing the lateral distance between terminals, thereby maintaining low inductance.
3Reliability
If a lead sheathed part is provided on the second lead terminal to secure creepage distance, then the insulation performance is improved, but the device complexity increases
Solution Approach 1:
The patent applies local quality by providing the sheathed part only on the second terminal rather than both terminals. This localized approach ensures the necessary creepage distance is achieved at the critical insulation point without adding sheathing structures throughout the entire device, thereby limiting the increase in complexity.
Data Source
AI summary
Provided are a semiconductor device, a busbar, and a power converter that can suppress an increase in the size of the device and in inductance while ensuring insulation performance between terminals. For example, a semiconductor device 1 includes a first terminal 110 projecting from a sealing body 100 along a given direction, and a second terminal 120 adjacent to the first terminal 110 with a space formed between the second terminal 120 and the first terminal 110, the second terminal 120 projecting from the sealing body 100 along a given direction in a direction of projection that is the same as a direction of projection of the first terminal 110. The first terminal 110 has a first exposed part 112 exposed outside the sealing body 100. The second terminal 120 has a second sheathed part 121 projecting from the sealing body 100, the second sheathed part 121 being sheathed with an insulating material, and a second exposed part 122 projecting from the second sheathed part 121, the second exposed part 122 being exposed outside the sealing body 100. A distance D2 along a given direction from a front end 121a of the second sheathed part 121 to the sealing body 100 is longer than a distance D1 along the given direction from a front end 112a of the first exposed part 112 to the sealing body 100.