Bypass Electrode for Uniform Gate Potential in Field-Effect Transistors

The gate electrode is segmented into multiple connection portions along the channel length direction, with each portion independently connected to the gate potential supply line through bypass electrodes. This segmentation allows uniform electric potential distribution across different regions of the gate electrode, resolving the contradiction by dividing the gate electrode structure into manageable segments rather than using a single long connection.

Bypass electrodes are introduced to create additional electrical connection paths in the vertical dimension (from the gate electrode surface upward to the gate potential supply line), complementing the horizontal connection portions. This multi-dimensional connection approach ensures uniform potential distribution without requiring excessively long single-path connections, thus improving reliability while controlling complexity.

The gate electrode structure employs different connection portion lengths at different locations along the channel, with longer connection portions positioned where electric field concentration is more severe. This localized adjustment optimizes withstand voltage in critical regions without uniformly increasing the total gate electrode area, thus resolving the contradiction between strength and area.

Bypass electrodes serve as intermediary connection elements that provide additional current paths between the gate electrode and the gate potential supply line. These intermediaries distribute the electric field more evenly without requiring the gate electrode itself to occupy a larger area, thereby improving withstand voltage while maintaining compact dimensions.