Semiconductor Bypass Switch Using Pyrotechnic p-n Junction Destruction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing short-circuit switching devices in power electronic systems, such as converter arrangements and multilevel converters, require faster switching times than mechanically operating pyrotechnic bypass switches can provide, and are limited by the endurance of mechanical parts under high short-circuit energies.
Innovation Solution
A short-circuit switching device incorporating a semiconductor element with pn junctions and a pyrotechnic ignition device, where the semiconductor element is made conductive by destroying pn junctions with explosive gas released after ignition, eliminating the need for mechanical parts and enhancing resistance to short-circuit energies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If mechanically operated pyrotechnic bypass switches are used, then switching times of less than one millisecond can be achieved, but the switching time is still too slow for modern power electronic systems and mechanical parts have limited endurance under high short-circuit energies
Solution Approach 1:
The patent replaces the mechanically operated switching system with a semiconductor-based system. The semiconductor element (thyristor or IGBT) eliminates mechanical moving parts, thereby achieving faster switching times in the microsecond range and significantly improved reliability under high short-circuit energies. The semiconductor device is destroyed by the explosive gas to ensure complete switching, removing the limitations of mechanical endurance.
2Speed
If semiconductor elements with multiple pn junctions are used, then faster switching times in the microsecond range can be achieved, but the device becomes more sensitive to short-circuit energies
Solution Approach 1:
The patent extracts and destroys specific pn junctions within the semiconductor element using explosive gas. By selectively destroying only the necessary pn junctions (e.g., the third pn junction in a four-layer structure), the device achieves fast switching while limiting the damage to only the required portions, thereby reducing overall sensitivity to short-circuit energies compared to complete device destruction.
Solution Approach 2:
The patent converts the harmful effect of short-circuit energies into a beneficial switching mechanism. The explosive gas, which could be considered a harmful factor, is used deliberately to destroy pn junctions and achieve the desired conductive state. This transforms potential damage into a controlled switching action that ensures complete device activation.
3Reliability
If the pyrotechnic ignition device destroys all pn junctions, then complete conduction is achieved, but the semiconductor element is completely destroyed and cannot be reset
Solution Approach 1:
The patent applies partial destruction rather than complete destruction of the semiconductor element. By selectively destroying only the necessary pn junctions (e.g., the third pn junction) while leaving others intact, the device achieves complete conduction reliability for the required switching function while preserving enough structure to allow for controlled reset or replacement, balancing reliability with manufacturability and system design flexibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution achieves significantly faster switching times in the microsecond range and increased insensitivity to high short-circuit energies, as the semiconductor element becomes conductive regardless of current flow direction after pyrotechnic ignition, allowing for efficient and reliable operation in power electronic systems.
Implementation Method 1
the semiconductor element is at least partially destroyed by the explosive gas released by the ignition device after an explosion
Data Source
Figure 1
Figure 2
Figure 3
AI summary
The invention relates to, among others, a short-circuit switching device (10), in particular a bypass switch. According to the invention, the short-circuit switching device (10) comprises a semiconductor element (20) with at least one p-n junction (223) and at least one pyrotechnic ignition device (30), wherein the semiconductor element (20) is or at least can be in a blocking state prior to the ignition of the pyrotechnic ignition device (30) on the basis of the involvement of the p-n junction (223), and after the ignition of the pyrotechnic ignition device (30), the semiconductor element (20) is at least partially destroyed, namely at least with respect to the at least one p-n junction (223), and made at least partially conductive regardless of the current flow direction by means of the explosion gas (G) released by the ignition device (30) after an explosion.