C-Axis AlN Multilayer Capacitor for Capacitance and Withstand Voltage
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Solution Overview
Problem
Existing multilayered capacitors face challenges in achieving high capacitance and improved withstand voltage characteristics, which are essential for meeting the demands of miniaturized and high-performance electronic devices.
Innovation Solution
A multilayered capacitor design incorporating a dielectric layer made of an aluminum nitride (AlN)-based compound, doped with elements like Ni, Co, Mn, Cr, V, Zn, Re, Ta, Nb, Ti, Zr, Mg, Sc, Er, or La, with a c-axis crystal orientation, and internal electrodes made of conductive metals such as Mo, W, Ru, Ti, or Pt, to enhance crystal alignment and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If thin film capacitor structure is used to maximize area and minimize dielectric layer thickness, then high capacitance is achieved, but withstand voltage characteristics deteriorate
Solution Approach 1:
The patent changes the material composition parameters of the dielectric layer by doping AlN with specific elements (Sc, Er, Y, La) at controlled concentrations (1-30 at%). This modifies the electrical and mechanical properties of the dielectric material, enabling high capacitance while maintaining improved withstand voltage characteristics through optimized material composition rather than simply minimizing thickness.
Solution Approach 2:
The patent creates a composite dielectric material by combining AlN base material with dopant elements (Sc, Er, Y, La). This composite structure leverages the high dielectric constant of AlN while the dopant elements contribute to enhanced breakdown strength and electrical properties, achieving both high capacitance and improved withstand voltage in the thin film structure.
2Quantity of substance
If dielectric layer thickness is minimized to achieve high capacitance, then capacitance density improves, but crystal orientation alignment becomes more difficult and defects increase
Solution Approach 1:
The patent modifies the crystal growth parameters by controlling doping elements and their concentrations during the thin film deposition process. The dopants (Sc, Er, Y, La) influence the nucleation and growth kinetics, promoting preferred c-axis orientation even in ultra-thin layers (20-400 nm), thereby maintaining crystal orientation alignment despite minimized thickness.
Solution Approach 2:
The dopant elements act as intermediaries that mediate between the substrate and the AlN dielectric layer, facilitating controlled crystal growth and orientation. These dopants influence the atomic arrangement during deposition, ensuring proper c-axis alignment in the thin film structure without requiring excessive thickness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves withstand voltage characteristics and achieves high capacitance by aligning crystal orientations, reducing defects, and minimizing lattice mismatch, resulting in enhanced performance.
Implementation Method 1
the dielectric layer includes dielectric grains, and a crystal orientation of the dielectric grains is c-axis crystal orientation
Data Source
AI summary
A multilayered capacitor according to present disclosure includes a dielectric layer including an aluminum nitride (AlN)-based compound, the aluminum nitride-based compound includes AlN, or a doped AlN compound in which AlN is doped with Ni, Co, Mn, Cr, V, Zn, Re, Ta, Nb, Ti, Zr, Mg, Sc, Er, Y, La, or a combination thereof, and a crystal orientation of the aluminum nitride-based compound is a c-axis crystal orientation.