C-Channel Process Kit Purge Gas Direction
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Solution Overview
Problem
Conventional process kits for semiconductor CVD chambers suffer from excessive wear and material deposits due to improper purge gas direction, leading to frequent cleaning needs and substrate contamination.
Innovation Solution
A process kit design featuring a C-channel with annular portions and a pumping region, sealed by a liner assembly, which directs purge gases efficiently through openings in the top annular portion, preventing material accumulation and contamination, and includes an isolator to direct process gases and purge gases into a pumping channel for effective exhaust.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional process kits are used with bottom purge gas, then the processing volume is limited to a desired region, but excessive wear and material deposits occur on the liners
Solution Approach 1:
The process kit is divided into multiple liners (first liner, second liner, third liner) positioned at different locations. Each liner is independently replaceable, allowing the system to maintain functionality while reducing wear impact on the entire assembly. The segmentation enables targeted replacement of only the most worn components.
Solution Approach 2:
A fourth liner is introduced as an intermediary component positioned between the substrate and the first liner. This additional liner acts as a protective barrier that intercepts material deposits before they reach the primary liners, thereby reducing wear and extending the service interval of the main liner components.
2Manufacturing precision
If bottom purge gas is used to prevent deposition on chamber bottom, then processing region is confined, but excessive material accumulates on the liners
Solution Approach 1:
Different liners are positioned at specific locations where material deposition is most problematic. The first liner is positioned to protect against lateral deposition, the second liner protects the chamber bottom, and the third liner protects upper chamber regions. Each liner provides localized protection tailored to the deposition patterns in its specific region.
Solution Approach 2:
The fourth liner serves as an intermediary barrier between the substrate and the first liner, intercepting material that would otherwise accumulate on the primary liners. This intermediary component reduces the quantity of material reaching the main liners while maintaining precise film deposition control in the processing region.
3Productivity
If liners are used to confine plasma and prevent contamination, then processing efficiency is improved, but service interval is shortened due to material build-up
Solution Approach 1:
The liner assembly is segmented into multiple independently replaceable components (first, second, third, and fourth liners). This segmentation allows for selective replacement of only the most worn liners rather than replacing the entire assembly, thereby extending the effective service interval while maintaining processing efficiency.
Solution Approach 2:
The fourth liner acts as a sacrificial intermediary component that protects the primary liners from material accumulation. By positioning this additional liner between the substrate and the first liner, the system maintains plasma confinement and contamination prevention functionality while extending the service interval of the main liner components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design extends the service interval of the process kit by reducing particle deposition and contamination, thereby minimizing cleaning frequency and maintaining film quality.
Implementation Method 1
The C-channel further includes a top annular portion, bottom annular portion, and middle annular portion. The top annular portion has a top surface and a bottom surface. The top surface has a plurality of openings formed therethrough.
Implementation Method 2
The pumping region is sealed by the liner assembly such that the plurality of openings formed in the top surface of the top annular portion extend through the top annular portion.
Implementation Method 3
The design extends the service interval of the process kit by reducing particle deposition and contamination, thereby minimizing cleaning frequency and maintaining film quality.
Data Source
AI summary
A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.