C-Containing Si Film Composition Control via Dual Precursor Confinement
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Solution Overview
Problem
The existing film-forming processes for semiconductor devices face challenges in controlling the composition ratio of films formed on substrates, as they rely on a single type of precursor, making it difficult to achieve precise control over the film composition.
Innovation Solution
A technique involving a cycle of supplying a hydro-based precursor and a halogen-based precursor into a process chamber, confining them, and then exhausting the chamber, which allows for improved control over the composition ratio of the film formed on the substrate by using a combination of organic silane and halosilane precursors to form a C-containing Si film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single type of precursor is used in the film-forming process, then the process is simple, but the controllability of film composition ratio deteriorates
Solution Approach 1:
The precursor supply process is segmented into multiple independent precursor types (hydrogen-based and halogen-based precursors). Each precursor type is supplied separately through independent supply lines, allowing individual control of each precursor's flow rate and timing. This segmentation enables precise adjustment of the film composition ratio by controlling the relative amounts of different precursors without complicating the overall process structure.
Solution Approach 2:
The system dynamically adjusts precursor supply conditions during the film-forming process. The supply rates, timing, and confinement durations of different precursors are dynamically controlled based on desired film composition targets. This dynamic control allows real-time optimization of film composition ratio while maintaining process simplicity through automated control mechanisms.
2Manufacturing precision
If multiple types of precursors are used to improve film composition control, then the composition ratio controllability improves, but the process complexity increases
Solution Approach 1:
Multiple precursor types (hydrogen-based and halogen-based precursors) are merged into a single integrated film-forming process. The precursors are supplied sequentially or simultaneously into the same process chamber under unified control, combining their effects to form the desired film composition. This merging approach achieves precise composition control without requiring separate processing steps or complex equipment for each precursor type.
Solution Approach 2:
The process chamber and control system are designed with multi-functionality to handle multiple precursor types. The same chamber accommodates different precursor gases, and the control system manages the supply, confinement, and reaction of various precursors using a unified interface. This universality reduces process complexity by avoiding the need for dedicated equipment for each precursor type while maintaining precise composition control.
3Ease of manufacture
If conventional precursors are used, then the deposition process is straightforward, but the film quality and deposition rate at lower temperatures deteriorate
Solution Approach 1:
The system changes key process parameters including precursor types, supply rates, confinement time, and temperature profiles to achieve high-quality film deposition at lower temperatures. By adjusting these parameters, the reaction kinetics are optimized to enable effective film formation without requiring high temperatures, thereby maintaining film quality and improving deposition rate under milder conditions while keeping the process straightforward.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the controllability of the composition ratio of the C-containing Si film, allowing for a high Si concentration and low C concentration, suppressing polycrystallization, and improving film quality and deposition rate, even at lower temperatures without plasma, thus reducing manufacturing costs.
Implementation Method 1
supplying a hydro-based precursor containing a first element and a halogen-based precursor containing a second element into a process chamber accommodating a substrate to confine the hydro-based precursor and the halogen-based precursor in the process chamber
Data Source
AI summary
Provided is a technique of forming a film containing a first element and a second element on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a hydro-based precursor containing the first element and a halogen-based precursor containing the second element into a process chamber accommodating a substrate to confine the hydro-based precursor and the halogen-based precursor in the process chamber; (b) maintaining a state where the hydro-based precursor and the halogen-based precursor are confined in the process chamber; and (c) exhausting the process chamber.