C-Shaped Vertical Channel Semiconductor Device for High Integration Density
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Solution Overview
Problem
Current semiconductor devices, such as FinFET and MBCFET, face limitations in increasing integration density and enhancing performance due to their device structure.
Innovation Solution
A semiconductor device with a C-shaped active area is developed, featuring a channel portion extending vertically on a substrate, source/drain portions at the upper and lower ends of the channel, and a gate stack that overlaps the channel, forming a C-shaped structure to enhance performance and density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional FinFET or MBCFET structures are used, then device performance can be maintained at current levels, but integration density cannot be increased further due to structural limitations
Solution Approach 1:
The patent transitions from planar 2D channel structures to a 3D C-shaped vertical channel structure that extends through multiple layers. The channel portion rises vertically from the substrate with source/drain portions at upper and lower ends, creating a three-dimensional active area that significantly increases integration density by utilizing the vertical dimension for device stacking and closer packing.
Solution Approach 2:
The gate stack is positioned within the C-shaped structure formed by the channel and source/drain portions. The gate stack overlaps the channel portion on the inner sidewall of the C-shaped structure, with the gate stack having a portion surrounded by the C-shaped structure, creating a nested configuration where the gate is embedded within the channel-source/drain enclosure.
2Productivity
If device size is reduced to increase density, then integration density improves, but manufacturing precision requirements increase
Solution Approach 1:
The device is segmented into distinct functional portions: a vertical channel portion extending from the substrate, source/drain portions at the upper and lower ends that extend toward the channel in the transverse direction, and a gate stack overlapping the channel. This segmentation into modular components facilitates systematic manufacturing and assembly while achieving high density through the compact C-shaped configuration.
Data Source
AI summary
A semiconductor device with a C-shaped active area and an electronic apparatus including the same is disclosed. The semiconductor device may include a first device and a second device opposite to each other on a substrate, each of which includes: a channel portion extending vertically on the substrate; source/drain portions located at the upper and lower ends of the channel portion and along the channel portion, the source/drain portions and the channel portion constitute a C-shaped structure; and a gate stack overlapping the channel portion on an inner sidewall of C-shaped structure, the gate stack has a portion surrounded by the C-shaped structure. The openings of the C-shaped structures of the two devices are opposite to each other. At least a portion of the gate stack of the first device close to the channel portion and that of the second device close to the channel portion are substantially coplanar.