Plasma Etching Gas Composition for Fine Inorganic Patterning
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Solution Overview
Problem
As semiconductor devices become highly integrated, the challenge lies in forming fine patterns on semiconductor substrates while using an etching gas that has high etch selectivity and low global warming potential.
Innovation Solution
A plasma etching process is performed using a mixed gas comprising C2H2F4 as the main etching gas and O2 or an oxygen-containing gas as the auxiliary etching gas, with a ratio of about 1 to 5, to form inorganic and organic patterns with high selectivity and reduced environmental impact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional etching gases are used to form fine patterns with high etch selectivity, then pattern formation precision is improved, but global warming potential increases
Solution Approach 1:
The patent changes the chemical composition parameters of the etching gas from traditional high-GWP gases (like SF6) to a mixed gas system containing C2H2F4 and O2 or oxygen-containing gases. This parameter change maintains etching performance while reducing environmental impact, as the mixed gas achieves high etch selectivity for inorganic layers relative to organic masks without using high global warming potential substances
2Manufacturing precision
If etching gas with high etch selectivity is used to form fine patterns, then manufacturing precision is improved, but environmental harm increases
Solution Approach 1:
The patent modifies the etching gas composition to use C2H2F4 as the main etching gas with O2 or oxygen-containing gases as auxiliary gases in a ratio of about 1:1 to 5:1. This parameter change achieves high etch selectivity for inorganic layers while using gases with lower environmental harm compared to traditional etching gases
Solution Approach 2:
The patent employs a composite gas mixture rather than a single gas, combining C2H2F4 with O2 or oxygen-containing gases. This composite approach leverages the etching capability of C2H2F4 while the oxygen-containing component enhances selectivity and reduces environmental impact, achieving both high manufacturing precision and reduced environmental harm
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process enhances etching selectivity for inorganic layers relative to organic mask patterns, improving pattern formation precision and reducing the global warming potential of the etching gas.
Implementation Method 1
performing a plasma etching process on the inorganic layer
Implementation Method 2
The plasma etching process is performed by using a mixed gas including C2H2F4 gas as a main etching gas and O2 gas or an oxygen-containing gas as an auxiliary etching gas
Data Source
AI summary
A semiconductor device manufacturing method includes forming an inorganic layer on a support layer, forming organic mask patterns on the inorganic layer, and forming inorganic patterns and space patterns configured to at least partially expose the support layer between the inorganic patterns by performing a plasma etching process on the inorganic layer with the organic mask patterns as an etching mask. The plasma etching process has an etching selectivity that favors the inorganic layer relative to the organic mask patterns. The plasma etching process on the inorganic layer is performed by using a mixed gas including C2H2F4 gas as a main etching gas and O2 gas or an oxygen-containing gas as an auxiliary etching gas, and a ratio of the main etching gas to the auxiliary etching gas is configured as about 1 to about 5.