CA_ODT Voltage Switching for Memory Power-Up Control
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Solution Overview
Problem
The integration of smaller memory device areas and removal of some ODT pins lead to a lack of defined operations for power-up processes using multiple power voltages, necessitating a more efficient method to switch between these voltages.
Innovation Solution
A semiconductor device incorporating a voltage sensor, a converter, and a command/address on-die-termination (CA_ODT) circuit that senses voltage levels and generates corresponding power voltages for a memory device, allowing immediate and sequential switching between different power levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If ODT pins are removed to reduce pin count and integrate functions, then device integration is improved, but the ability to define and control power-up operations with multiple power voltages deteriorates
Solution Approach 1:
The CA_ODT circuit is designed to perform multiple functions: it serves as both an on-die termination circuit for signal integrity and as a power voltage switching mechanism. By integrating these functions, the patent eliminates the need for separate ODT pins while maintaining power-up control capability through the existing command/address bus.
Solution Approach 2:
The system uses its own command/address bus and existing CA_ODT circuitry to perform the power voltage switching function, rather than requiring external control pins. The memory device self-manages the power-up sequence by interpreting voltage setting commands on its existing bus infrastructure.
2Device complexity
If traditional power voltage switching methods are used without dedicated control pins, then device simplicity is improved, but power voltage switching speed and precision deteriorate
Solution Approach 1:
The voltage sensor detects the voltage level of the voltage setting command before the power voltage is actually switched. This preliminary detection allows the system to prepare the power voltage switching sequence in advance, ensuring immediate and precise voltage transitions when needed.
Solution Approach 2:
The voltage sensor provides feedback about the command voltage level to the CA_ODT circuit, which then adjusts the power voltage accordingly. This feedback mechanism ensures precise and rapid power voltage switching without requiring complex external control logic.
3Reliability
If voltage sensing and power voltage generation are separated into different circuits, then functional reliability is improved, but device complexity increases
Solution Approach 1:
The patent combines the voltage sensing function and power voltage generation control into a single integrated pathway through the CA_ODT circuit. The voltage sensor, convertor, and CA_ODT circuit work as an integrated control chain, reducing the need for separate complex control circuits while maintaining reliable power voltage switching.
Data Source
AI summary
A semiconductor device can be applied to a memory device. The semiconductor device of the disclosure includes a voltage sensor, a convertor and a command/address on-die-termination (CA_ODT) circuit. The voltage sensor receives a voltage setting command, and sense a voltage level of the voltage setting command to generate a sensing signal. The convertor generates a setting signal in response to the sensing signal. The CA_ODT circuit generates a power voltage for the memory device in response to the setting signal, wherein a voltage level of the power voltage corresponds to the voltage level of the voltage setting command.