Multi-Connected Channel All-Around Semiconductor Device
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Solution Overview
Problem
Current Gate All-Around (GAA) field-effect transistors have a single gate closed channel structure, limiting the output current per unit area and device density due to the single gate contribution to potential in the channel, especially when multiple transistors are connected in parallel or side-by-side.
Innovation Solution
The method involves forming multiple gate structures with opposite ends, where each gate structure is surrounded by a multi-connected channel layer with a plane direction perpendicular to the gate extension direction, creating a multi-connected channel all-around (CAA) semiconductor device that enhances the output current per unit area by allowing multiple current paths in three-dimensional space.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single gate closed channel structure is used in GAA field-effect transistors, then the device structure is simple and easy to manufacture, but the output current per unit area is limited due to single gate contribution to channel potential
Solution Approach 1:
The channel is segmented into multiple independent gates (first gate structure and second gate structure) instead of using a single gate. Each gate structure independently controls a portion of the channel, allowing multiple current paths to flow through the channel simultaneously. This segmentation enables the channel to support parallel current flow, thereby increasing the output current per unit area while maintaining manufacturability through modular gate structures.
Solution Approach 2:
The invention transitions from a single-gate planar control to multi-gate three-dimensional control of the channel. By arranging gate structures in different spatial dimensions (first gate structure extending in a first direction, second gate structure extending in a second direction perpendicular to the first direction), the channel potential is controlled from multiple dimensional perspectives, enabling enhanced current flow capacity without compromising manufacturing complexity.
2Productivity
If multiple GAA field-effect transistors are electrically connected in parallel or arranged side-by-side, then the output current can be increased, but the device density and area occupation increase
Solution Approach 1:
Multiple transistor functions are merged into a single integrated device structure. The first gate structure and second gate structure work together to control a shared channel, effectively combining the functionality of multiple transistors into one compact unit. This merging approach achieves high output current capability without requiring separate physical transistor instances, thereby reducing device area occupation while maintaining high productivity.
Solution Approach 2:
The multi-gate channel structure serves multiple functions simultaneously: it provides parallel current paths for high output current, maintains compact footprint for high device density, and enables independent gate control for versatile operation modes. The single channel structure universally supports multiple transistor functions that would traditionally require separate physical devices, achieving area efficiency without sacrificing performance.
3Productivity
If a multi-connected channel layer with multiple gate structures is formed, then the output current per unit area increases due to multiple current paths, but the device structure becomes more complex
Solution Approach 1:
The gate structures are nested around the channel in a compact configuration. The first gate structure and second gate structure are positioned in perpendicular directions, creating a nested, space-efficient arrangement that maximizes gate control over the channel while minimizing the overall device footprint. This nested geometry achieves multiple current paths without proportionally increasing structural complexity.
Solution Approach 2:
The gate structures adopt curved or rounded geometries rather than sharp angular shapes. The first gate structure and second gate structure are configured with curved surfaces that smoothly wrap around portions of the channel, enabling compact three-dimensional integration. This curvature-based design reduces structural complexity by eliminating sharp corners and facilitating continuous manufacturing processes, while still achieving the desired multi-path current flow capability.
Data Source
AI summary
A method of manufacturing a channel all-around semiconductor device includes: forming a plurality of gate structures having the same extension direction, and forming a multi-connected channel layer on a substrate. Each of the gate structures has opposite first end and second end, and the gate structures are all surrounded by the formed multi-connected channel layer, and a plane direction of the multi-connected channel layer is perpendicular to the extension direction of the gate structures, so that channels of the gate structures are connected to each other.