CAAC-OS Transistor with Localized Hydrogen Control
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving small variation in transistor characteristics, favorable reliability, high on-state current, miniaturization, and low power consumption, particularly in oxide semiconductor-based transistors.
Innovation Solution
A semiconductor device structure is developed with a specific layering of insulators and conductors, including a CAAC-OS (c-axis aligned crystalline oxide semiconductor) with controlled hydrogen concentration, and a manufacturing method involving sputtering and CMP techniques to form a transistor with improved electrical characteristics and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If oxide semiconductor-based transistors are used, then new functionality and integration are enabled, but transistor characteristic variation increases and reliability deteriorates
Solution Approach 1:
The patent applies local quality by creating distinct regions with different hydrogen concentrations within the transistor structure. Specifically, the source/drain regions are engineered to have lower hydrogen concentration than the channel region, and different insulator layers are designed with varying hydrogen concentrations to achieve optimal local electrical characteristics for each functional region, thereby reducing overall device variation and improving reliability
Solution Approach 2:
The patent utilizes parameter changes by systematically varying hydrogen concentration across different layers and regions of the transistor. By controlling hydrogen concentration as a key parameter - with specific ranges specified for source/drain regions versus channel regions - the invention optimizes electrical characteristics and reduces variability in transistor performance
2Area of moving object
If transistor size is reduced for miniaturization, then integration density increases, but electrical characteristics and reliability worsen
Solution Approach 1:
The patent maintains reliable electrical characteristics in miniaturized transistors by applying local quality through region-specific hydrogen concentration control. Even as overall device dimensions are reduced, the source/drain regions maintain lower hydrogen concentration while the channel region maintains higher hydrogen concentration, ensuring that each region performs its intended function reliably at smaller scales
Solution Approach 2:
The patent employs preliminary action by pre-engineering the hydrogen concentration distribution during the manufacturing process. The source/drain regions are formed with controlled lower hydrogen concentration before final device assembly, ensuring that even miniaturized transistors start with optimized electrical characteristics that maintain reliability at reduced sizes
3Use of energy by moving object
If power consumption is reduced, then energy efficiency improves, but on-state current decreases
Solution Approach 1:
The patent resolves the power consumption versus on-state current trade-off through parameter changes in hydrogen concentration distribution. By optimizing hydrogen concentration in the channel region to enhance carrier mobility and in the source/drain regions to reduce scattering, the invention achieves low power consumption while maintaining high on-state current through improved electrical transport properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a semiconductor device with reduced transistor characteristic variation, enhanced reliability, high on-state current, and low power consumption, enabling miniaturization and high integration while maintaining stable electrical performance.
Implementation Method 1
deposited by a sputtering method
Implementation Method 2
polishing the first conductive film by a CMP method
Data Source
AI summary
A transistor with a high on-state current and a semiconductor device with high productivity are provided. A first insulator; a second insulator over the first insulator; a third insulator and a first conductor over the second insulator; a fourth insulator over the third insulator and the first conductor; a fifth insulator over the fourth insulator; a first oxide over the fifth insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide; a third conductor over the fourth oxide; a sixth insulator over the second conductor; a seventh insulator over the third conductor; an eighth insulator over the fifth insulator to the seventh insulator; a fifth oxide over the second oxide and positioned between the second conductor and the third conductor; a ninth insulator over the fifth oxide; and a fourth conductor over the ninth insulator are included. Hydrogen concentration of the first conductor is lower than hydrogen concentration of the fourth conductor.