Cache Latch Segmentation for Memory Data Transfer Noise Reduction
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Solution Overview
Problem
Nonvolatile memory devices, such as NAND flash memory, face challenges in achieving high read and write speeds while retaining data even when power is interrupted, and existing designs often result in inefficient data transfer and increased noise during read operations due to the arrangement of bit lines and cache latches.
Innovation Solution
The memory device incorporates a memory cell array with alternately disposed even and odd bit lines, cache latches, and column merge units, allowing for efficient data transfer and error correction through a two-dimensional arrangement of cache latches and redundant cache latches to improve read performance and reduce noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If bit lines and cache latches are arranged in conventional designs, then data storage capacity is achieved, but data transfer efficiency deteriorates and noise increases during read operations
Solution Approach 1:
The bit lines are segmented into even and odd bit lines, and cache latches are correspondingly divided into even and odd cache latches. This segmentation allows separate handling of different data paths, improving transfer efficiency by enabling parallel operations while reducing noise through spatial separation of signal paths.
Solution Approach 2:
Cache latches are arranged in a two-dimensional configuration rather than a conventional one-dimensional layout. This dimensional change optimizes the spatial relationship between bit lines and cache latches, enhancing data transfer efficiency while providing better noise isolation through increased spatial distribution.
2Productivity
If cache latches are densely arranged to improve data transfer efficiency, then read performance improves, but noise during read operations increases
Solution Approach 1:
Cache latches are segmented into even and odd groups that are spatially separated and associated with corresponding even and odd bit lines. This segmentation maintains high density within each group for performance while the separation between groups reduces mutual noise interference during read operations.
Solution Approach 2:
Column merge units serve as intermediary components between cache latches and data lines. These intermediaries buffer and condition signals, allowing dense cache latch arrangements for high performance while mitigating noise propagation to the data output paths.
3Device complexity
If conventional single-type cache latch design is used, then device simplicity is maintained, but data integrity during power interruptions deteriorates
Solution Approach 1:
Different types of cache latches (even and odd) are used in different locations within the memory device. Each latch type can be optimized for specific functions, with some configured for enhanced data retention during power interruptions. This local differentiation improves reliability without requiring complete redesign of all cache latches.
Solution Approach 2:
Redundant cache latches are provided in advance to compensate for potential data loss during power interruptions. These redundant latches are pre-configured and can replace failed latches, providing beforehand cushioning against reliability issues while maintaining overall device structure simplicity.
Data Source
AI summary
A memory device includes a memory cell array; bit lines including even and odd bit lines extending in a first direction and alternately disposed; cache latches including even cache latches which exchange data with the memory cell array through the even bit lines and odd cache latches which exchange data with the memory cell array through the odd bit lines; 2^k data lines, where k is a natural number equal to or greater than 2, respectively corresponding to 2^k input/output pins; and column merge units respectively allocated to the input/output pins, and each suitable for coupling any one of the even cache latches or any one of the odd cache latches to a data line corresponding to an input/output pin to which it is allocated. A pitch of the column merge units in a second direction intersecting the first direction is greater than a pitch of the cache latches.