Semiconductor Package Layout for Faster Cache-to-Main Memory Access

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Solution Overview

Problem

Existing 3D-IC packages face challenges in increasing communication speed between cache memory dies and main memory dies.

Innovation Solution

A semiconductor package design that includes a logic die, a cache memory die with a redistribution layer (RDL) for enhanced wiring, a main memory die stack structure vertically aligned, an inactive element, and a mold covering the sidewalls and surfaces of the main memory dies and inactive element.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If main memory dies are stacked vertically on cache memory die to increase communication speed, then communication speed between cache and main memory is improved, but the planar area occupied by main memory dies increases

Engineering Contradiction:
Improvecommunication speedVSAvoidplanar area
Core Design Contradiction:
SpeedVSArea of stationary object

Solution Approach 1:

The patent transitions from horizontal arrangement to vertical stacking of main memory dies, utilizing the third dimension (height) to accommodate multiple memory dies. This dimensional change allows increased memory capacity and communication speed without proportionally increasing the planar footprint, as dies are stacked in the vertical direction rather than spread out horizontally.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements a stacked configuration where main memory dies are nested vertically on top of the cache memory die, similar to nested dolls. This nesting approach allows multiple functional layers to occupy the same or overlapping planar projections, thereby reducing the total planar area required while maintaining high-speed communication pathways through vertical interconnects.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Use of energy by moving object

If inactive element is added on cache memory die for power supply, then power supply efficiency is improved, but the planar area of cache memory die increases

Engineering Contradiction:
Improvepower supply efficiencyVSAvoidplanar area of cache memory die
Core Design Contradiction:
Use of energy by moving objectVSArea of stationary object

Solution Approach 1:

The patent introduces an inactive element with specific local functionality (power supply) positioned at a particular location on the cache memory die. This inactive element provides localized power distribution to the stacked main memory dies without requiring modifications across the entire cache die area, thereby improving power supply efficiency while minimizing the additional planar area consumed.

Inventive Principle:
Principle #3Local quality

3Strength

If mold covers sidewalls of main memory dies and inactive element, then structural protection is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvestructural protectionVSAvoidmanufacturing complexity
Core Design Contradiction:
StrengthVSEase of manufacture

Solution Approach 1:

The patent divides the protective mold structure into distinct segments: one portion covering the sidewalls of stacked main memory dies and another portion covering the inactive element on the cache memory die. This segmentation allows the mold to be applied in manageable sections, potentially simplifying the manufacturing process while providing comprehensive structural protection to both the vertical stack and the horizontal inactive element.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20250192085A1Semiconductor package
Publication Date: 2025.06.12 SAMSUNG ELECTRONICS CO LTD
  • US20250192085A1 patent drawing
  • US20250192085A1 patent drawing
  • US20250192085A1 patent drawing

AI summary

A semiconductor package includes a logic die having a first planar area, a cache memory die on the logic die and having the first planar area, a main memory die stack structure on the cache memory die and including main memory dies stacked in a vertical direction and having a second planar area smaller than the first planar area, and a mold on the cache memory die and covering sidewalls of the main memory dies.