Calabash-Shaped MIM Capacitor Structure for Higher Capacitance Density

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Solution Overview

Problem

The challenge in semiconductor manufacturing is to create MIM capacitors with high capacitance in a small footprint due to the increasing density of integrated circuits, which requires innovative design and fabrication methods to enhance capacitance without increasing physical size.

Innovation Solution

A calabash-shaped MIM capacitor structure is developed, featuring a stacked layer with specific dielectric layers and a calabash-shaped profile, formed through controlled etching processes to increase surface area and capacitance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the density of memory cell is increased, then the space occupied by capacitor per unit area is reduced, but the capacitance requirement cannot be met

Engineering Contradiction:
Improvememory cell densityVSAvoidcapacitance
Core Design Contradiction:
ProductivityVSQuantity of substance

Solution Approach 1:

The invention transitions from a conventional planar capacitor structure to a three-dimensional calabash-shaped structure. By extending the capacitor into the vertical dimension and creating a non-planar profile with rounded bottom and shoulder regions, the surface area for charge storage is significantly increased within the same footprint, thereby achieving higher capacitance without occupying more space per unit area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The capacitor structure employs curved surfaces instead of flat planes, featuring a rounded bottom and rounded shoulder in its calabash-shaped profile. This curvature increases the surface area compared to a rectangular or planar structure of the same footprint, enabling higher capacitance while maintaining compact dimensions suitable for high-density integration.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Ease of manufacture

If conventional MIM capacitor structure is used, then manufacturing process is simple, but capacitance per unit area is low

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoidcapacitance per unit area
Core Design Contradiction:
Ease of manufactureVSQuantity of substance

Solution Approach 1:

The fabrication process is divided into multiple etching stages: a first etching step creates an initial trench structure, and a second etching step forms the final calabash-shaped profile. This segmentation of the manufacturing process enables precise control over the complex three-dimensional shape, making the intricate structure manufacturable through systematic, controlled steps rather than requiring a single complex process.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20250234569A1Calabash-shaped MIM capacitor structure and fabricating method of the same
Publication Date: 2025.07.17 UNITED MICROELECTRONICS CORP
  • US20250234569A1 patent drawing
  • US20250234569A1 patent drawing
  • US20250234569A1 patent drawing

AI summary

A calabash-shaped MIM capacitor structure includes a stacked layer. The stacked layer includes numerous dielectric layers. An MIM capacitor is disposed within the stacked layer. The MIM capacitor includes a calabash-shaped profile. The calabash-shaped profile includes a rounded bottom, a narrow body and a rounded shoulder disposed from bottom to top.