Calixarene Resist Underlayer Film for Trench Pattern Transfer
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Solution Overview
Problem
In the manufacturing of integrated circuit elements, existing compositions for forming resist underlayer films struggle to achieve precise pattern transfer on substrates with varying trench aspect ratios, particularly those with significant differences in width and depth, leading to issues with flatness, solvent resistance, and outgas inhibition.
Innovation Solution
A composition comprising a calixarene-based compound, obtained by substituting phenolic hydroxyl groups with a monovalent organic group of 1 to 30 carbon atoms, combined with an organic solvent, is used to form a resist underlayer film, which is then subjected to heating or acid treatment before removal, enabling superior flatness, solvent resistance, and outgas-inhibitory abilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing compositions for forming resist underlayer films are used, then the pattern transfer process can be performed, but the flatness, solvent resistance, and outgas inhibition are insufficient for substrates with varying trench aspect ratios
Solution Approach 1:
The patent modifies the chemical structure of the calixarene compound by substituting phenolic hydroxyl groups with monovalent organic groups having 1 to 30 carbon atoms. This parameter change in molecular structure improves the film's solvent resistance and outgas inhibition while maintaining etching resistance, enabling consistent performance across substrates with varying trench aspect ratios
Solution Approach 2:
The invention uses a composite composition containing calixarene-based compound, organic solvent, and optionally other resins or additives. This composite approach combines the high etching resistance of calixarene with the solubility benefits of organic solvents and the flatness improvement from additional resin components, achieving multiple performance requirements simultaneously
2Manufacturing precision
If high carbon content materials are used for resist underlayer film to increase etching selectivity, then pattern transfer precision improves, but the film becomes more difficult to remove and requires stronger removal conditions
Solution Approach 1:
The patent carefully controls the carbon chain length of the monovalent organic groups (1 to 30 carbon atoms) attached to the calixarene structure. This parameter optimization maintains sufficient etching resistance while preventing excessive carbon content that would make film removal difficult, achieving a balance between pattern transfer precision and subsequent film removal ease
Solution Approach 2:
The patent introduces an acid treatment step as an intermediary process before film removal. The acid treatment modifies the calixarene-based film to facilitate its removal by basic solutions, acting as a mediator that enables easy removal without compromising the film's protective function during etching
3Reliability
If the resist underlayer film is made more resistant to solvents to improve solvent resistance, then the film stability improves, but the film may become less compatible with subsequent processing steps
Solution Approach 1:
The patent selects specific organic solvents with appropriate polarity and boiling point characteristics to dissolve the calixarene-based compound. This parameter optimization ensures the film has sufficient solvent resistance for processing stability while maintaining compatibility with subsequent etching and development steps through proper solvent-film interaction
Solution Approach 2:
The patent applies different properties to different aspects of the film: the calixarene core provides local high etching resistance, the organic solvent groups provide local solubility and processing compatibility, while the overall film structure provides uniform solvent resistance. This local quality differentiation enables simultaneous satisfaction of multiple conflicting requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition and method result in a resist underlayer film that provides improved flatness, solvent resistance, and outgas-inhibitory abilities, suitable for substrates with diverse trench aspect ratios, enhancing the precision and reliability of pattern formation in semiconductor device manufacturing.
Implementation Method 1
a composition for forming a resist underlayer film is applied on the upper side of a substrate to provide a resist underlayer film
Implementation Method 2
The method further includes subjecting the resist underlayer film to heating or an acid treatment before removing the resist underlayer film
Implementation Method 3
a resist underlayer film that provides improved flatness, solvent resistance, and outgas-inhibitory abilities
Data Source
AI summary
A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.