Capacitance Element Manufacturing via Recessed Etching
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Solution Overview
Problem
In the manufacturing of capacitance elements, especially those formed along recessed shapes, the oxide film used as an etching stopper layer often cannot be completely removed, leading to residual material within the device.
Innovation Solution
A method involving the concurrent patterning of the first capacitance electrode, capacitance insulation film, and second capacitance electrode, followed by the formation of an interlayer insulating film and selective etching to expose the first capacitance electrode, thereby creating contact holes and preventing the etching stopper layer from being left in the capacitance element.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the capacitance element is formed along a recessed shape to achieve miniaturization, then the capacitance is improved, but the oxide film used as the etching stopper layer cannot be completely removed and remains as residual material
Solution Approach 1:
The patent segments the etching process into multiple stages: a first etching process that forms the recessed portion and capacitance element, and a second etching process that selectively removes the oxide film from the recessed portion. This segmentation allows the oxide film to be removed in a controlled manner without compromising the capacitance element structure.
Solution Approach 2:
The patent applies a preliminary action by forming the oxide film as an etching stopper layer before forming the capacitance element in the recessed portion. This preliminary oxide film formation enables precise control of the etching process and ensures complete removal of the oxide film after the capacitance element is formed, eliminating residual material.
2Manufacturing precision
If the oxide film is used as an etching stopper layer in the capacitance element formation process, then the etching control is improved, but the oxide film cannot be removed from the recessed shape capacitance element
Solution Approach 1:
The etching process is divided into two distinct segments: the first etching process uses the oxide film as a stopper to form the recessed portion and capacitance element with high precision, while the second etching process selectively removes the oxide film from the recessed portion. This segmentation resolves the contradiction by allowing both precise etching control and complete oxide film removal.
Solution Approach 2:
The oxide film serves its purpose as an etching stopper layer during the first etching process, and then is deliberately removed in the second etching process. The oxide film is discarded after fulfilling its temporary function, enabling complete removal from the recessed capacitance element while maintaining etching precision during the formation stage.
3Ease of manufacture
If the capacitance element is formed along a protruding shape, then the manufacturing process is simpler, but miniaturization is not achieved
Solution Approach 1:
The patent transitions from a two-dimensional planar capacitance element to a three-dimensional recessed capacitance element by forming the capacitance element along the depth of the recessed portion. This dimensional change enables miniaturization of the capacitance element footprint while maintaining manufacturing feasibility through controlled etching processes.
Data Source
AI summary
A method of manufacturing an electro-optical device includes the steps of: forming a recessed portion at an insulating member; forming a first capacitance electrode, a capacitance insulation film, and a second capacitance electrode along the recessed portion; concurrently patterning the first capacitance electrode, the capacitance insulation film, and the second capacitance electrode; removing a portion of the second capacitance electrode; forming an interlayer insulating film; and etching, until a portion of the first capacitance electrode is exposed in plan view, a region where the portion of the second capacitance electrode is removed, to form a contact hole penetrating through the interlayer insulating film and the capacitance insulation film.