Capacitance Extraction for Semiconductor Layouts

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Solution Overview

Problem

Current IC design methods face challenges in accurately predicting and optimizing parasitic capacitances and resistances, which can lead to undesirable performance issues such as signal delays, requiring a balance between extraction accuracy and computational resources.

Innovation Solution

The design system employs a method to partition the semiconductor layout into regions with varying accuracy settings for capacitance extraction, using 3D and 2.5-D capacitance determination processes, and combines different extraction tools to achieve fast and accurate parasitic parameter extraction, prioritizing accuracy in critical areas and efficiency elsewhere.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If high accuracy capacitance extraction is performed across the entire semiconductor layout, then measurement precision is improved, but productivity deteriorates due to increased computational time and resources

Engineering Contradiction:
Improvecapacitance extraction accuracyVSAvoidextraction speed
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The semiconductor layout is divided into multiple regions, with critical regions identified and separated from non-critical regions. Different extraction accuracies are applied to different regions, allowing high accuracy where needed while maintaining overall productivity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different extraction accuracy levels to different spatial regions of the layout. Critical regions receive high accuracy extraction while non-critical regions use lower accuracy methods, optimizing the balance between overall accuracy and extraction speed.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If uniform high resolution extraction is applied to all regions, then manufacturing precision is improved, but loss of time increases due to processing entire layout at maximum resolution

Engineering Contradiction:
Improveparasitic parameter extraction accuracyVSAvoidextraction time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The layout is segmented into critical and non-critical regions, allowing differential extraction resolution. This segmentation enables high precision extraction only where it impacts manufacturing outcomes, reducing overall extraction time.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The extraction resolution parameter is dynamically adjusted based on region criticality. Critical regions use high resolution extraction while non-critical regions use lower resolution, optimizing the trade-off between precision and time.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If multiple extraction tools are combined to achieve balanced accuracy and efficiency, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improvesimulation accuracyVSAvoidextraction system complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Different extraction tools are assigned to different region types (critical vs. non-critical). This segmentation allows the system to leverage the strengths of multiple tools while managing complexity through structured assignment rather than uniform application.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The extraction system is designed to handle multiple tool types and accuracy levels through a unified framework. This multi-functionality allows reliable extraction across diverse regions while abstracting away the underlying complexity from the user.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20220147678A1Systems and methods for capacitance extraction
Publication Date: 2022.05.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20220147678A1 patent drawing
  • US20220147678A1 patent drawing
  • US20220147678A1 patent drawing

AI summary

A method for capacitance extraction includes: performing a first capacitance extraction on one or more first regions of a semiconductor layout; performing a second capacitance extraction on one or more second regions of the semiconductor layout, a resolution of the second capacitance extraction being less than a resolution of the first capacitance extraction; constructing a netlist for the semiconductor layout based on results of the first capacitance extraction and of the second capacitance extraction; and modifying the semiconductor layout based on the netlist. The modified semiconductor layout is used to fabricate an integrated circuit.