Capacitance Ratio Overlay Measurement for Buried Chip Structures

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Solution Overview

Problem

Current overlay measurement techniques in the semiconductor industry face challenges in accurately measuring relative displacements of structures on a chip, particularly when these structures are buried beneath insulator films, as they often rely on optical methods that are limited by feature size and require separate targets that do not resemble high-resolution features, leading to inefficiencies and inaccuracies.

Innovation Solution

The use of charged particle beams to perform overlay measurements by determining capacitance ratios between symmetrically arranged conductive elements on a substrate, which changes due to relative displacements, enabling precise detection of overlay errors through voltage contrast imaging and capacitance imbalance analysis.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If optical methods are used for overlay measurement, then measurement can be performed on visible structures, but measurement precision deteriorates for buried structures and high-resolution features

Engineering Contradiction:
Improveoverlay measurement precisionVSAvoiddifficulty of measuring buried structures
Core Design Contradiction:
Measurement precisionVSDifficulty of detecting and measuring

Solution Approach 1:

The patent replaces optical measurement methods with charged particle beam methods. The charged particle beam (electrons or ions) interacts with the substrate to generate signals that reveal overlay information, enabling precise measurement of both surface and buried structures that are inaccessible to optical methods.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the measurement parameter from optical properties to electrical properties (capacitance). By measuring capacitance ratios between symmetrically arranged conductive elements, the system achieves high-precision overlay measurement that is sensitive to sub-nanometer displacements, overcoming the resolution limits of optical methods.

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If separate dedicated targets are used for overlay measurement, then overlay can be measured, but the targets do not resemble high-resolution features and require additional fabrication steps

Engineering Contradiction:
Improveoverlay measurement capabilityVSAvoidcomplexity of target structures
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent makes the conductive elements serve dual functions: they are both functional circuit elements and overlay measurement targets. The symmetrically arranged conductive elements that are already part of the device architecture can be used for capacitance-based overlay measurement, eliminating the need for separate dedicated targets.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent merges the overlay measurement function with the functional circuit elements. By using the device's own conductive elements as measurement targets, the system combines manufacturing and measurement purposes into a single integrated approach, reducing fabrication complexity.

Inventive Principle:
Principle #5Merging (Combining)

3Measurement precision

If charge injection elements are added to the substrate, then overlay measurement can be performed, but measurement time increases and sensitivity is reduced

Engineering Contradiction:
Improveoverlay measurement sensitivityVSAvoidmeasurement time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent uses the substrate's existing conductive elements to perform the measurement function. The symmetrically arranged conductive elements inherently provide the measurement capability through their capacitance characteristics, eliminating the need for separate charge injection elements and reducing measurement time.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent changes from time-intensive charge injection methods to rapid capacitance ratio measurement. By measuring the electrical properties (capacitance) of existing conductive elements, the system achieves high sensitivity without the time penalty of charge injection and relaxation processes.

Inventive Principle:
Principle #35Parameter changes

4Measurement precision

If capacitance ratio measurement is used, then overlay measurement sensitivity is improved, but the system requires precise control of electrical properties

Engineering Contradiction:
Improveoverlay measurement sensitivityVSAvoidcomplexity of electrical control
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent uses symmetrically arranged conductive elements where the symmetry itself provides the measurement reference. Any overlay displacement breaks the symmetry and creates a measurable capacitance ratio change. This geometric symmetry simplifies the electrical control requirements while maintaining high measurement sensitivity.

Inventive Principle:
Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method allows for accurate, high-resolution overlay measurements without the need for dedicated charge injection elements, reducing measurement time and improving sensitivity while eliminating tradeoffs between sensitivity and observation interface requirements, thereby enhancing the yield of semiconductor manufacturing processes.

Implementation Method 1

determining a first capacitance of a first pair of elements and a second capacitance of a second pair of elements

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

voltage contrast based on charged particle beams

Methodology Applied
Scientific EffectVoltage contrast:

Implementation Method 3

when the first through third elements become asymmetric, a capacitance imbalance is formed

Methodology Applied
Scientific EffectCapacitance imbalance: Capacitance

Data Source

PatentUS20240427253A1Overlay measurement using balanced capacity targets
Publication Date: 2024.12.26 ASML NETHERLANDS BV
  • US20240427253A1 patent drawing
  • US20240427253A1 patent drawing
  • US20240427253A1 patent drawing

AI summary

A method of determining an overlay measurement of a substrate includes: injecting charge into a charge injection element of the substrate; determining a first capacitance of a first pair of elements and a second capacitance of a second pair of elements; and determining a capacitance ratio based on the first capacitance and the second capacitance. The overlay measurement may be determined based on the capacitance ratio, which may indicate an imbalance.