Capacitive Coupling Structures in Semiconductor Devices
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Solution Overview
Problem
Semiconductor devices face challenges in minimizing resistive and dielectric losses in antennas and couplers, which affect the efficiency and bandwidth of communication devices, particularly in modern radio communications networks where higher data rates and bandwidth are demanded.
Innovation Solution
The semiconductor device incorporates a configuration with capacitive coupling structures and a shielding structure to reduce interconnection lengths and electrical connections, utilizing materials with low loss tangents and embedding capacitive coupling structures within the chip packaging structure to minimize losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If traditional electrical connections and interconnections are used in antenna devices, then the device can be assembled and function, but resistive and dielectric losses increase, reducing antenna efficiency
Solution Approach 1:
The patent merges the antenna element and capacitive coupler into a single integrated structure formed from the same conductive material and fabrication process. The antenna element serves dual purposes: as the radiating element and as part of the capacitive coupling structure, eliminating the need for separate interconnection elements and reducing resistive losses at connection points.
Solution Approach 2:
The patent extracts and eliminates traditional electrical interconnections and supporting structures between the antenna and capacitive coupler. By removing these intermediate elements, the design reduces the number of solder joints, wire bonds, or PCB traces that would otherwise contribute to resistive and dielectric losses in the RF signal path.
2Ease of manufacture
If the antenna and capacitive coupler are separated by traditional interconnections, then the device structure is simpler to manufacture, but the interconnection length increases, causing higher energy loss
Solution Approach 1:
The antenna element and capacitive coupler are merged into a single integrated conductive structure fabricated using the same process steps. This integration eliminates multiple assembly operations and interconnection elements, achieving both manufacturing simplicity and reduced energy loss by minimizing the RF current path length.
Solution Approach 2:
The patent transitions from a three-dimensional assembly with separate components and interconnections to a two-dimensional planar structure where the antenna and capacitive coupler are formed in the same layer. This dimensional simplification reduces manufacturing complexity while minimizing the physical distance between components, thereby reducing energy loss.
3Reliability
If multiple electrical connections are used to connect the antenna to the capacitive coupler, then the electrical connection is more robust, but the device complexity and number of loss points increase
Solution Approach 1:
The antenna element and capacitive coupler are merged into a single continuous conductive structure formed in one fabrication step. This integration eliminates multiple discrete electrical connections and their associated solder joints or wire bonds, reducing device complexity while maintaining robust electrical connectivity through the integrated structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces resistive and dielectric losses, enhancing the efficiency and bandwidth of semiconductor devices by minimizing energy loss and interference, thereby improving the performance of communication devices.
Implementation Method 1
a first capacitive coupling structure (306-1) and a second capacitive coupling structure (306-2) may be provided
Implementation Method 2
a shielding structure, which may be disposed between the chip (302) and the first capacitive coupling structure (306-1)
Data Source
Figure 1
Figure 2A~2B
Figure 2C
AI summary
A semiconductor device may include: a chip; a chip packaging structure at least partially surrounding the chip and having a receiving region configured to receive a first capacitive coupling structure; a first capacitive coupling structure disposed in the receiving region; and a second capacitive coupling structure disposed over the first capacitive coupling structure and capacitively coupled to the first capacitive coupling structure.