Capacitive Hole Array Structure for Stable DRAM Capacitors
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Solution Overview
Problem
As DRAM devices miniaturize, the single cylindrical supporting structure of capacitors becomes unstable and prone to falling off, compromising the stability and capacitance of the capacitors.
Innovation Solution
A manufacturing method that forms capacitive holes with a triangular structure by etching a semiconductor base using multiple mask layers and layers, creating a stable supporting structure by ensuring the intersections of round projections provide a continuous outer contour, preventing the supporting structure from breaking or falling off.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the height of the capacitor is continuously increased to increase capacitance value, then the capacitance value is improved, but the single cylindrical supporting structure becomes unstable and easily broken and displaced
Solution Approach 1:
The single cylindrical supporting structure is divided into multiple supporting structures arranged in an array. Each capacitive hole contains one supporting structure, and multiple capacitive holes are arranged to form the complete capacitor. This segmentation distributes the mechanical load and prevents single-point failure, resolving the instability issue while maintaining the required capacitance through parallel arrangement of multiple capacitive units.
Solution Approach 2:
The supporting structure transitions from a symmetric single cylindrical form to an asymmetric multi-pronged configuration. The supporting structure includes multiple prongs extending in different directions from a central region, creating an asymmetric geometry that provides better mechanical anchoring and distribution of stress, thereby improving stability against breaking and displacement.
2Volume of moving object
If the size of the capacitor is reduced to meet miniaturization demands, then the device size is improved, but the supporting structure becomes more prone to falling off
Solution Approach 1:
The supporting structure extends in multiple spatial dimensions with prongs radiating in different directions. This multi-dimensional configuration increases the surface area contact with the capacitor body and distributes mechanical stresses across multiple dimensions, providing enhanced stability even as the overall capacitor size is reduced for miniaturization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the stability of the capacitive structure, preventing the supporting structure from falling off and meeting the demand for continuous miniaturization of semiconductor devices by maintaining higher supporting stability and capacitance.
Implementation Method 1
second openings distributed uniformly are formed on the semiconductor base by etching
Implementation Method 2
a lower electrode layer, a dielectric layer and an upper electrode layer are deposited within the capacitive holes
Data Source
AI summary
A manufacturing method of a capacitive structure includes: providing a semiconductor base; forming a first mask layer on the semiconductor base, the first mask layer having a plurality of first round hole patterns distributed uniformly; forming first openings distributed uniformly on the semiconductor base by etching based on the first round hole patterns; forming a second mask layer on one side, away from the semiconductor base, of the first openings, and forming a plurality of second round hole patterns on the second mask layer; forming second openings distributed uniformly on the semiconductor base by etching based on the second round hole patterns, and meanwhile continuously etching the first openings; and etching the first openings and the second openings to form capacitive holes, and depositing a lower electrode layer, a dielectric layer and an upper electrode layer within the capacitive holes to form the capacitive structure.